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["No.","분야","표준번호","표준명","버전"]
[1,"제정","ISO 18115-3:2022","Part 3: Terms used in optical interface analysis",2022]
[2,null,"ISO 20579-1:2024","Surface chemical analysis — Sample handling, preparation and mounting — Part 1: Documenting and reporting the handling of specimens prior to analysis",2024]
[3,null,"ISO 17862:2022","Surface chemical analysis — Secondary ion mass spectrometry — Linearity of intensity scale in single ion counting time-of-flight mass analysers",2022]
[4,"개정","KS D ISO 15470","표면화학분석 ― X선 광전자 분광법 ― 선택한 기기의 성능 파라미터 설명",2004]
[5,null,"KS D ISO 15471","표면화학분석 ― 오제전자 분광법 ― 선택한 기기 성능의 파라미터 설명",2004]
[]
[6,null,"KS D ISO 18114","표면화학분석 ― 이차이온 질량 분광분석법 ― 이온 주입된 기준물질로부터 상대감도인자의 결정",2003]
[7,null,"KS D ISO 18118","표면화학분석 ― 오제전자 분광법과 X선 광전자 분광법 ― 균질재료의 정량분석을 위해 실험으로 결정된 상대감도인자의 사용 지침",2004]
[8,null,"KS D ISO 19318","표면화학분석 ― X선 광전자 분광법 ― 전하제어와 전하교정에 사용하는 방법의 보고",2004]
[]
[9,"확인","KS D ISO 19319","표면화학분석 ― 오제전자 분광법과 X선 광전자 분광법 ― 측면분해능, 분석영역, 분석기로 측정한 시료범위의 결정",2003]
[10,null,"KS D ISO 20341","표면화학분석 ― 이차이온 질량분광분석법 ― 다중 델타층 기준물질을 이용하여 깊이 분해능 파라미터를 평가하는 방법",2003]
[11,null,"KS D ISO 21270","표면화학분석 ― X선 광전자 및 오제 전자 분광계 ― 세기 눈금의 직선성",2004]
[12,null,"KS D ISO 19319","표면화학분석 ― 정적 이차이온 질량 분광분석법의 정보 포맷 ",2003]

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["ISO 표준",null,null,null,"부합화 표준㉿"]
["SC","표준번호","표준명","Stage","표준번호","표준명","버전"]
["SC1"," ISO 18115-1:2023","Surface chemical analysis — Vocabulary — Part 1: General terms and terms used in spectroscopy",60.6,"KS D ISO18115-1","표면화학분석 ― 제1부: 일반 용어 및 분광학에서 사용되는 용어",2023]
["SC1"," ISO 18115-2:2021","Surface chemical analysis — Vocabulary — Part 2: Terms used in scanning-probe microscopy",60.6,"KS D ISO18115-2","표면화학분석 ― 제2부: 주사 타밈 현미경에 사용되는 용어",2021]
["SC1"," ISO 18115-3:2022","Surface chemical analysis — Vocabulary — Part 3: Terms used in optical interface analysis",60.6,"-","-","-"]
["SC2"," ISO 16242:2011","Surface chemical analysis — Recording and reporting data in Auger electron spectroscopy (AES)",90.93,"-","-","-"]
["SC2"," ISO 16243:2011","Surface chemical analysis — Recording and reporting data in X-ray photoelectron spectroscopy (XPS)",90.93,"-","-","-"]
["SC2"," ISO/TR 16268:2009","Surface chemical analysis — Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation",60.6,"-","-","-"]
["SC2"," ISO 18116:2005","Surface chemical analysis — Guidelines for preparation and mounting of specimens for analysis",90.92,"-","-","-"]
["SC2"," ISO 18516:2019","Surface chemical analysis — Determination of lateral resolution and sharpness in beam based methods with a range from nanometres to micrometres",90.93,"-","-","-"]
["SC2"," ISO/TR 19319:2013","Surface chemical analysis — Fundamental approaches to determination of lateral resolution and sharpness in beam-based methods",60.6,"KS D ISO19319","표면화학분석 ― 오제전자 분광법과 X선 광전자 분광법 ― 측면분해능, 분석영역, 분석기로 측정한 시료범위의 결정",2003]
["SC2"," ISO 20579-1:2024","Surface chemical analysis — Sample handling, preparation and mounting — Part 1: Documenting and reporting the handling of specimens prior to analysis",60.6,"-","-","-"]
["SC2"," ISO/FDIS 20579-2","Surface chemical analysis — Sample handling, preparation and mounting — Part 2: Documenting and reporting the preparation and mounting of specimens for analysis",50.2,"-","-","-"]
["SC2"," ISO 20579-3:2021","Surface chemical analysis — Sample handling, preparation and mounting — Part 3: Biomaterials",60.6,"-","-","-"]
["SC2"," ISO 20579-4:2018","Surface chemical analysis — Guidelines to sample handling, preparation and mounting — Part 4: Reporting information related to the history, preparation, handling and mounting of nano-objects prior to surface analysis",90.93,"-","-","-"]
["SC3"," ISO 14975:2000","Surface chemical analysis — Information formats",90.93,"KS D ISO14975","표면화학분석 ― 정보 포맷",2000]
["SC3"," ISO 14976:1998","Surface chemical analysis — Data transfer format",90.93,"KS D ISO14976","표면화학분석 ― 자료 전송 포맷",1998]
["SC3"," ISO 22048:2004","Surface chemical analysis — Information format for static secondary-ion mass spectrometry",90.93,"KS D ISO22048","표면화학분석 ― 정적 이차이온 질량 분광분석법의 정보 포맷",2004]
["SC3"," ISO 22581:2021","Surface chemical analysis — Near real-time information from the X-ray photoelectron spectroscopy survey scan — Rules for identification of, and correction for, surface contamination by carbon-containing compounds",60.6,"-","-","-"]
["SC3"," ISO/AWI 24689","Surface chemical analysis — Rule sets for automatic retrieval of information from the X-Ray photoelectron spectroscopy survey spectrum — Identification and use of significant minor features in the XPS survey spectrum.",20,"-","-","-"]
["SC3"," ISO 28600:2011","Surface chemical analysis — Data transfer format for scanning-probe microscopy",90.93,"-","-","-"]
["SC4"," ISO 14606:2022","Surface chemical analysis — Sputter depth profiling — Optimization using layered systems as reference materials",60.6,"\tKS D ISO14606","\t표면 화학 분석 ― 스퍼터 깊이 분포도 ― 표준 물질로서 계층적 시스템을 이용한 최적화",2022]
["SC4"," ISO/TR 15969:2021","Surface chemical analysis — Depth profiling — Measurement of sputtered depth",60.6,"\tKS D ISOTR15969","표면화학분석 ― 깊이 분포 분석 ― 스퍼터된 깊이 측정",2001]
["SC4"," ISO 16531:2020","Surface chemical analysis — Depth profiling — Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS",60.6,"-","-","-"]
["SC4"," ISO 17109:2022","Surface chemical analysis — Depth profiling — Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films",60.6,"-","-","-"]
["SC4"," ISO/TR 22335:2007","Surface chemical analysis — Depth profiling — Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer",90.93,"-","-","-"]
["SC4"," ISO 23170:2022","Surface chemical analysis — Depth profiling — Non-destructive depth profiling of nanoscale heavy metal oxide thin films on Si substrates with medium energy ion scattering",60.6,"-","-","-"]
["SC6"," ISO 12406:2010","Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon",90.93,"-","-","-"]
["SC6"," ISO 13084:2018","Surface chemical analysis — Secondary ion mass spectrometry — Calibration of the mass scale for a time-of-flight secondary ion mass spectrometer",90.92,"-","-","-"]
["SC6"," ISO/CD 13084","Surface chemical analysis — Secondary ion mass spectrometry — Calibration of the mass scale for a time-of-flight secondary ion mass spectrometer",30.99,"-","-","-"]
["SC6"," ISO 14237:2010","Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials",90.93,"KS D ISO14237","표면화학분석 ― 이차 이온 질량 분석 ― 실리콘 내에 균일하게 첨가된 붕소 원자 농도의 측정 방법",2010]
["SC6"," ISO 17560:2014","Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon",90.93,"\tKS D ISO17560","표면화학분석 ―이차 이온 질량 분석 ―실리콘 내의 붕소 깊이 분포 측정 방법",2014]
["SC6"," ISO 17862:2022","Surface chemical analysis — Secondary ion mass spectrometry — Linearity of intensity scale in single ion counting time-of-flight mass analysers",60.6,"-","-","-"]
["SC6"," ISO 18114:2021","Surface chemical analysis — Secondary-ion mass spectrometry — Determination of relative sensitivity factors from ion-implanted reference materials",60.6,"KS D ISO18114","표면화학분석 ― 이차이온 질량 분광분석법 ― 이온 주입된 기준물질로부터 상대감도인자의 결정",2003]
["SC6"," ISO 20341:2003","Surface chemical analysis — Secondary-ion mass spectrometry — Method for estimating depth resolution parameters with multiple delta-layer reference materials",90.2,"\tKS D ISO20341","표면화학분석 ― 이차이온 질량분광분석법 ― 다중 델타층 기준물질을 이용하여 깊이 분해능 파라미터를 평가하는 방법",2003]
["SC6"," ISO 20411:2018","Surface chemical analysis — Secondary ion mass spectrometry — Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry",90.92,"-","-","-"]
["SC6"," ISO/AWI 20411","Surface chemical analysis — Secondary ion mass spectrometry — Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry",20,"-","-","-"]
["SC6"," ISO 22415:2019","Surface chemical analysis — Secondary ion mass spectrometry — Method for determining yield volume in argon cluster sputter depth profiling of organic materials",90.6,"-","-","-"]
["SC6"," ISO/TS 22933:2022","Surface chemical analysis — Secondary ion mass spectrometry — Method for the measurement of mass resolution in SIMS",60.6,"-","-","-"]
["SC6"," ISO 23812:2009","Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials",90.93,"-","-","-"]
["SC6"," ISO 23830:2008","Surface chemical analysis — Secondary-ion mass spectrometry — Repeatability and constancy of the relative-intensity scale in static secondary-ion mass spectrometry",90.93,"-","-","-"]
["SC7"," ISO 5861:2024","Surface chemical analysis — X-ray photoelectron spectroscopy — Method of intensity calibration for quartz-crystal monochromated Al Kα XPS instruments",60.6,"-","-","-"]
["SC7"," ISO 10810:2019","Surface chemical analysis — X-ray photoelectron spectroscopy — Guidelines for analysis",90.6,"-","-","-"]
["SC7"," ISO 13424:2013","Surface chemical analysis — X-ray photoelectron spectroscopy — Reporting of results of thin-film analysis",90.93,"-","-","-"]
["SC7"," ISO/TR 14187:2020","Surface chemical analysis — Characterization of nanostructured materials",60.6,"-","-","-"]
["SC7"," ISO 14701:2018","Surface chemical analysis — X-ray photoelectron spectroscopy — Measurement of silicon oxide thickness",90.6,"-","-","-"]
["SC7"," ISO 15470:2017","Surface chemical analysis — X-ray photoelectron spectroscopy — Description of selected instrumental performance parameters",90.93,"KS D ISO15470","표면화학분석 ― X선 광전자 분광법 ― 선택한 기기의 성능 파라미터 설명",2004]
["SC7"," ISO 15471:2016","Surface chemical analysis — Auger electron spectroscopy — Description of selected instrumental performance parameters",90.93,"KS D ISO15471","표면화학분석 ― 오제전자 분광법 ― 선택한 기기 성능의 파라미터 설명",2004]
["SC7"," ISO 15472:2010","Surface chemical analysis — X-ray photoelectron spectrometers — Calibration of energy scales",90.93,"\tKS D ISO15472","표면 화학 분석 ― X선 광전자 분광기 ― 에너지 눈금의 교정",2010]
["SC7"," ISO 16129:2018","Surface chemical analysis — X-ray photoelectron spectroscopy — Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer",90.6,"-","-","-"]
["SC7"," ISO 17973:2024","Surface chemical analysis — Medium-resolution Auger electron spectrometers — Calibration of energy scales for elemental analysis",60.6,"KS D ISO17973","표면화학분석 ― 중분해능 오제전자 분광계 ― 원소 분석을 위한 에너지 눈금 교정",2002]
["SC7"," ISO 17974:2002","Surface chemical analysis — High-resolution Auger electron spectrometers — Calibration of energy scales for elemental and chemical-state analysis",90.93,"\tKS D ISO17974","표면화학분석 ― 고분해능 오제전자 분광계 ― 원소 및 화학상태 분석을 위한 에너지 눈금 교정",2002]
["SC7"," ISO 18118:2024","Surface chemical analysis — Auger electron spectroscopy and X-ray photoelectron spectroscopy — Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials",60.6,"KS D ISO18118","표면화학분석 ― 오제전자 분광법과 X선 광전자 분광법 ― 균질재료의 정량분석을 위해 실험으로 결정된 상대감도인자의 사용 지침",2004]
["SC7"," ISO/TR 18392:2005","Surface chemical analysis — X-ray photoelectron spectroscopy — Procedures for determining backgrounds",90.92,"-","-","-"]
["SC7"," ISO/CD TR 18392","Surface chemical analysis — X-ray photoelectron spectroscopy — Procedures for determining backgrounds",30.99,"-","-","-"]
["SC7"," ISO/TR 18394:2016","Surface chemical analysis — Auger electron spectroscopy — Derivation of chemical information",60.6,"-","-","-"]
["SC7"," ISO 18554:2016","Surface chemical analysis — Electron spectroscopies — Procedures for identifying, estimating and correcting for unintended degradation by X-rays in a material undergoing analysis by X-ray photoelectron spectroscopy",90.93,"-","-","-"]
["SC7"," ISO 19318:2021","Surface chemical analysis — X-ray photoelectron spectroscopy — Reporting of methods used for charge control and charge correction",60.6,"\tKS D ISO19318","표면화학분석 ― X선 광전자 분광법 ― 전하제어와 전하교정에 사용하는 방법의 보고",2004]
["SC7"," ISO 19668:2017","Surface chemical analysis — X-ray photoelectron spectroscopy — Estimating and reporting detection limits for elements in homogeneous materials",90.6,"-","-","-"]
["SC7"," ISO 19830:2015","Surface chemical analysis — Electron spectroscopies — Minimum reporting requirements for peak fitting in X-ray photoelectron spectroscopy",90.93,"-","-","-"]
["SC7"," ISO 20903:2019","Surface chemical analysis — Auger electron spectroscopy and X-ray photoelectron spectroscopy — Methods used to determine peak intensities and information required when reporting results",90.6,"-","-","-"]
["SC7"," ISO 21270:2004","Surface chemical analysis — X-ray photoelectron and Auger electron spectrometers — Linearity of intensity scale",90.93,"\tKS D ISO21270","표면화학분석 ― X선 광전자 및 오제 전자 분광계 ― 세기 눈금의 직선성",2004]
["SC7"," ISO/TR 23173:2021","Surface chemical analysis — Electron spectroscopies — Measurement of the thickness and composition of nanoparticle coatings",60.6,"-","-","-"]
["SC7"," ISO 24236:2005","Surface chemical analysis — Auger electron spectroscopy — Repeatability and constancy of intensity scale",90.93,"-","-","-"]
["SC7"," ISO 24237:2005","Surface chemical analysis — X-ray photoelectron spectroscopy — Repeatability and constancy of intensity scale",90.92,"-","-","-"]
["SC7"," ISO/DIS 24237","Surface chemical analysis — X-ray photoelectron spectroscopy — Repeatability and constancy of intensity scale",40,"-","-","-"]
["SC7"," ISO 29081:2010","Surface chemical analysis — Auger electron spectroscopy — Reporting of methods used for charge control and charge correction",90.93,"-","-","-"]
["SC8"," ISO 11505:2012","Surface chemical analysis — General procedures for quantitative compositional depth profiling by glow discharge optical emission spectrometry",90.92,"-","-","-"]
["SC8"," ISO/DIS 11505","Surface chemical analysis — General procedures for quantitative compositional depth profiling by glow discharge optical emission spectrometry",40.200000000000003,"-","-","-"]
["SC8"," ISO 14707:2021","Surface chemical analysis — Glow discharge optical emission spectrometry (GD-OES) — Introduction to use",60.6,"\tKS D ISO14707","표면화학분석 ― 글로우 방전 방출분광기(GD-OES) ― 소개서",2021]
["SC8"," ISO/TS 15338:2020","Surface chemical analysis — Glow discharge mass spectrometry — Operating procedures",90.92,"-","-","-"]
["SC8"," ISO/DTS 15338","Surface chemical analysis — Glow discharge mass spectrometry — Operating procedures",50.2,"-","-","-"]
["SC8"," ISO 16962:2017","Surface chemical analysis — Analysis of zinc- and/or aluminium-based metallic coatings by glow-discharge optical-emission spectrometry",90.93,"-","-","-"]
["SC8"," ISO/AWI 21133","Analysis of tin based metallic coatings by glow discharge optical emission spectrometry",20,"-","-","-"]
["SC8"," ISO 24417:2022","Surface chemical analysis — Analysis of metallic nanolayers on iron based substrates by glow-discharge optical-emission spectrometry",60.6,"-","-","-"]
["SC8"," ISO/TS 25138:2019","Surface chemical analysis — Analysis of metal oxide films by glow-discharge optical-emission spectrometry",90.92,"-","-","-"]
["SC8"," ISO/DTS 25138","Surface chemical analysis — Analysis of metal oxide films by glow discharge optical emission spectrometry",50.2,"-","-","-"]
["SC9"," ISO/DIS 4508","Surface chemical analysis — Scanning probe microscopy — Guideline for the method and procedure for determining the temperature effects on AFM dimensional measurements",40,"-","-","-"]
["SC9"," ISO 11039:2012","Surface chemical analysis — Scanning-probe microscopy — Measurement of drift rate",90.93,"-","-","-"]
["SC9"," ISO 11775:2015","Surface chemical analysis — Scanning-probe microscopy — Determination of cantilever normal spring constants",90.93,"-","-","-"]
["SC9"," ISO 11952:2019","Surface chemical analysis — Scanning-probe microscopy — Determination of geometric quantities using SPM: Calibration of measuring systems",90.93,"-","-","-"]
["SC9"," ISO 13083:2015","Surface chemical analysis — Scanning probe microscopy — Standards on the definition and calibration of spatial resolution of electrical scanning probe microscopes (ESPMs) such as SSRM and SCM for 2D-dopant imaging and other purposes",90.93,"-","-","-"]
["SC9"," ISO 13095:2014","Surface Chemical Analysis — Atomic force microscopy — Procedure for in situ characterization of AFM probe shank profile used for nanostructure measurement",90.93,"-","-","-"]
["SC9"," ISO/AWI TR 13096","Guideline to describe AFM probe properties",20,"-","-","-"]
["SC9"," ISO 21222:2020","Surface chemical analysis — Scanning probe microscopy — Procedure for the determination of elastic moduli for compliant materials using atomic force microscope and the two-point JKR method",60.6,"-","-","-"]
["SC9"," ISO/WD TR 23683","Surface chemical analysis — scanning probe microscopy — Guideline for experimental quantification of carrier concentration in semiconductor devices by using electric scanning probe microscopy",20.99,"-","-","-"]
["SC9"," ISO 23729:2022","Surface chemical analysis — Atomic force microscopy — Guideline for restoration procedure for atomic force microscopy images dilated by finite probe size",60.6,"-","-","-"]
["SC9"," ISO 27911:2011","Surface chemical analysis — Scanning-probe microscopy — Definition and calibration of the lateral resolution of a near-field optical microscope",90.93,"-","-","-"]
["SC10"," ISO/DIS 16666","Surface chemical analysis — Total reflection X-ray fluorescence — Principles and general requirements",40,"-","-","-"]
["SC10"," ISO 20289:2018","Surface chemical analysis — Total reflection X-ray fluorescence analysis of water",90.92,"-","-","-"]
["SC10"," ISO/DIS 20289","Surface chemical analysis — Total reflection X-ray fluorescence analysis of water",40.99,"-","-","-"]
["SC10"," ISO/DIS 23971","Surface chemical analysis — X-ray fluorescence analysis of particulate matter filters",40,"-","-","-"]
["SC10","ISO 16413:2020","Evaluation of thickness, density and interface width of thin films by X-ray reflectometry — Instrumental requirements, alignment and positioning, data collection, data analysis and reporting",60.6,"KS D ISO16413","X-선 반사율(XRR) 측정법을 이용한 박막의 두께, 밀도, 계면 너비 평가 — 장치 요건, 정렬 및 위치결정, 데이터 수집, 데이터 분석, 보고",2020]
["SC10","ISO 14706:2014","Surface chemical analysis — Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy",90.93,"KS D ISO14706","표면화학분석 ― 전반사 X-선 형광(TXRF)분광기에 의한 실리콘 웨이퍼의 표면 원소 불순물 측정",2014]
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