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["ISO 표준",{"$nulls":5},"부합화 표준㉿"]
["SC","표준번호","ED","표준명","Scope","Stage","표준번호","표준명","버전","최종 제정‧개정‧확인일"]
["-"," ISO 16413:2020",2,"Evaluation of thickness, density and interface width of thin films by X-ray reflectometry — Instrumental requirements, alignment and positioning, data collection, data analysis and reporting","method for the evaluation of thickness, density and interface width of single layer and multi-layered thin films which have thicknesses between approximately 1 nm and 1 μm, on flat substrates, by means of X-Ray Reflectometry (XRR)",90.6,"KS D ISO16413","X-선 반사율(XRR) 측정법을 이용한 박막의 두께, 밀도, 계면 너비 평가 — 장치 요건, 정렬 및 위치결정, 데이터 수집, 데이터 분석, 보고",2020,"2021-07-16"]
["-"," ISO 14706:2014",2,"Surface chemical analysis — Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy","TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces",90.93,"KS D ISO14706","표면화학분석 ― 전반사 X-선 형광(TXRF)분광기에 의한 실리콘 웨이퍼의 표면 원소 불순물 측정",2014,"2025-05-12"]
["-"," ISO/TR 4550",1,"Surface chemical analysis — Surface chemical analysis of bacteria and biofilms","-",60]
["-"," ISO 17331:2004",1,"Surface chemical analysis — Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy","chemical methods for the collection of iron and/or nickel from the surface of silicon-wafer working reference materials by the vapour-phase decomposition method or the direct acid droplet decomposition method",90.6]
["-"," ISO 17331:2004/Amd 1:2010",1,"Surface chemical analysis — Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy — Amendment 1","-",60.6]
["-"," ISO 18337:2015",1,"Surface chemical analysis — Surface characterization — Measurement of the lateral resolution of a confocal fluorescence microscope","method for determining the lateral resolution of a confocal fluorescence microscope (CFM) by imaging an object with a size much smaller than the expected resolution",90.93]
["-"," ISO/TS 18507:2015",1,"Surface chemical analysis — Use of Total Reflection X-ray Fluorescence spectroscopy in biological and environmental analysis","framework on the uses of Total Reflection X-Ray Fluorescence (TXRF) spectroscopy for elemental qualitative and quantitative analysis of biological and environmental samples",90.93]
["-"," ISO/TR 19693:2018",1,"Surface chemical analysis — Characterization of functional glass substrates for biosensing applications","examples of how methods of surface chemical analysis in the scope of ISO TC 201 are useful to characterize the nature of substrates used to produce biosensing devices\n\noverview of methods, strategies and guidance to identify possible sources of problems related to substrates, device production steps (cleaning, activation and chemical modification) and shelf-life (storage conditions and ageing)",60.6]
["-"," ISO 23124:2024",1,"Surface chemical analysis — Measurement of lateral and axial resolutions of a Raman microscope","method for measuring the spatial resolutions, lateral and axial, of the Raman microscope",60.6]
["-"," ISO 24465:2023",1,"Surface chemical analysis — Determination of the minimum detectability of surface plasmon resonance device","method for determining the minimum detectability of surface plasmon resonance device",60.6]
["-","ISO/CD 20579-5",1,"Surface chemical analysis — Specimen taking, storage, and transport of biological specimens\nPart 5: Title missing","This standard gives guidance on recording the way of specimen taking, storage, and transfer of biological samples for surface chemical analysis techniques such as secondary ion mass spectrometry (SIMS), Raman spectroscopy, and desorption electrospray ionization (DESI). This standard sets rules to be observed for the maintenance of biological samples.\n","30.20"]
["SC1"," ISO 18115-1:2023",3,"Surface chemical analysis — Vocabulary — Part 1: General terms and terms used in spectroscopy","terms for surface chemical analysis. It covers general terms and those used in spectroscopy",60.6,"KS D ISO18115-1","표면화학분석 ― 제1부: 일반 용어 및 분광학에서 사용되는 용어",2023,"제정 진행중"]
["SC1"," ISO 18115-2:2021",3,"Surface chemical analysis — Vocabulary — Part 2: Terms used in scanning-probe microscopy","terms used in scanning probe microscopy",60.6,"KS D ISO18115-2","표면화학분석 ― 제2부: 주사 타밈 현미경에 사용되는 용어",2021,"제정 진행중"]
["SC1"," ISO 18115-3:2022",1,"Surface chemical analysis — Vocabulary — Part 3: Terms used in optical interface analysis","terms for surface chemical analysis in the area of optical interface analysis including ellipsometry, Raman spectroscopy and nonlinear optical techniques as well as general optical terms",60.6,"KS D ISO18115-3","표면 화학 분석 - 용어- 제3부: 광학 계면 분석에 사용되는 용어",2022,"제정 진행중"]
["SC1"," ISO/AWI 18115-4",1,"Surface chemical analysis — Vocabulary — Part 4: Part 4: Terms used in Total Reflection X-ray Fluorescence (TXRF)","the terms related to the technique of total reflection x-ray fluorescence, extending the standard",10.99]
["SC10"," ISO 16666:2025",1,"Surface chemical analysis — Total reflection X-ray fluorescence — Principles and general requirements","terms and definitions for analytical methods where elements are identified and their concentrations determined by measuring X ray fluorescence radiation",60.6]
["SC10"," ISO 20289:2025",2,"Surface chemical analysis — Total reflection X-ray fluorescence analysis of water","chemical method for technicians working with total reflection X-ray fluorescence (TXRF) instrumentation to perform measurements of water samples, according to good practices, with a defined degree of accuracy and precision. \n\nTarget users are identified among laboratories performing routine analysis of large numbers of samples, which also conform with ISO/IEC 17025.\n\nmethod to determine the content of elements dissolved in water (e.g. drinking water, surface water and ground water). This document is also applicable for determining elements in waste waters and eluates, taking into account the specific and additionally occurring interferences.",60.6]
["SC10"," ISO 23971:2025",1,"Surface chemical analysis — X-ray fluorescence analysis of particulate matter filters","methodology to determine elemental concentration in Particulate matter collected on filtering membranes by means of X-ray fluorescence under grazing incidence conditions spectroscopy",60.6]
["SC2"," ISO 16242:2011",1,"Surface chemical analysis — Recording and reporting data in Auger electron spectroscopy (AES)","minimum level of information to be reported by the analyst following the analysis of a test specimen using Auger electron spectroscopy (AES)",90.93]
["SC2"," ISO 16243:2011",1,"Surface chemical analysis — Recording and reporting data in X-ray photoelectron spectroscopy (XPS)","minimum level of information to be reported by the analyst following the analysis of a test specimen using X‑ray photoelectron spectroscopy (XPS)",90.93]
["SC2"," ISO/TR 16268:2009",1,"Surface chemical analysis — Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation","a procedure for the certification of the areic dose of an ion-implanted analyte element of atomic number larger than that of silicon retained in a working reference material (WoRM) intended for surface-analytical use\n\nthe concept and the procedure for certification of the WoRM. There is also a description of the requirements for the reference materials, the comparative measurements and the actual certification",60.6]
["SC2"," ISO 18516:2019",2,"Surface chemical analysis — Determination of lateral resolution and sharpness in beam based methods with a range from nanometres to micrometres","methods for measuring lateral resolution and sharpness in imaging surface chemical analysis. It applies to all methods of surface analysis which use a beam to analyse the chemical composition of surfaces under defined settings of an instrument.",90.93]
["SC2"," ISO/TR 19319:2013",2,"Surface chemical analysis — Fundamental approaches to determination of lateral resolution and sharpness in beam-based methods","functions and their relevance to lateral resolution: point spread function (PSF), line spread function (LSF), edge spread function (ESF), modulation transfer function (MTF) and contrast transfer function (CTF); experimental methods for the determination of lateral resolution and parameters related to lateral resolution: imaging of a narrow stripe, sharp edge and square-wave gratings; physical factors affecting lateral resolution, analysis area and sample area viewed by the analyser in Auger electron spectroscopy and X-ray photoelectron spectroscopy",60.6,"KS D ISO19319","표면화학분석 ― 오제전자 분광법과 X선 광전자 분광법 ― 측면분해능, 분석영역, 분석기로 측정한 시료범위의 결정",2003,"2020-12-23\n(5년 도래 확인 중)"]
["SC2"," ISO 20579-1:2024",1,"Surface chemical analysis — Sample handling, preparation and mounting — Part 1: Documenting and reporting the handling of specimens prior to analysis","information needed to ensure that a sample has been selected, processed, handled, and stored in a manner consistent with the analysis objectives, and to ensure the reliability and reproducibility of the surface analyses",60.6,"KS D ISO 20579-1:2024","표면 화학 분석 — 시료의 취급, 준비 및 장착 — 제1부: 분석 전 시료 취급의 문서화 및 보고",2024,"제정 진행중"]
["SC2"," ISO 20579-2:2025",1,"Surface chemical analysis — Sample handling, preparation and mounting — Part 2: Documenting and reporting the preparation and mounting of specimens for analysis","information to be reported by an analyst in a datasheet, certificate of analysis, report or other publication regarding the handling, preparation, processing and mounting of specimens for surface analysis",60.6]
["SC2"," ISO 20579-3:2021",1,"Surface chemical analysis — Sample handling, preparation and mounting — Part 3: Biomaterials","guidance on methods of handling, mounting and surface treatment for a biomaterial specimen prior to surface chemical analysis",60.6]
["SC2"," ISO 20579-4:2018",1,"Surface chemical analysis — Guidelines to sample handling, preparation and mounting — Part 4: Reporting information related to the history, preparation, handling and mounting of nano-objects prior to surface analysis","information to be reported in a datasheet, certificate of analysis, report or other publication regarding the handling of nano-objects in preparation for surface chemical analysis",90.93]
["SC3"," ISO 14975:2000",1,"Surface chemical analysis — Information formats","format to supplement ISO 14976 to transfer data for the creation, expansion and revision of a surface chemical analysis spectral database",90.93,"KS D ISO14975","표면화학분석 ― 정보 포맷",2000,"2021-09-28"]
["SC3"," ISO 14976:1998",1,"Surface chemical analysis — Data transfer format","-",90.93,"KS D ISO14976","표면화학분석 ― 자료 전송 포맷",1998,"2021-09-28"]
["SC3"," ISO 22048:2004",1,"Surface chemical analysis — Information format for static secondary-ion mass spectrometry","digital format to store, and transfer between computers, in a compact way, important calibration and instrumental-parameter data necessary to make effective use of spectral-data files from static SIMS instruments",90.93,"KS D ISO22048","표면화학분석 ― 정적 이차이온 질량 분광분석법의 정보 포맷",2004,"2020-12-23\n(5년 도래 확인 중)"]
["SC3"," ISO 22581:2021",1,"Surface chemical analysis — Near real-time information from the X-ray photoelectron spectroscopy survey scan — Rules for identification of, and correction for, surface contamination by carbon-containing compounds","document is provided to assist in the surface analysis of thin films on materials which are not thought to contain carbon compounds as intended components but for which a C1s peak is observed in the survey spectrum.",60.6]
["SC3"," ISO/WD 24689",1,"Surface chemical analysis — Rule sets for automatic retrieval of information from the X-Ray photoelectron spectroscopy survey spectrum — Identification and use of significant minor features in the XPS survey spectrum.","See attached document for proposed scope and purpose",20.99]
["SC3"," ISO 28600:2011",1,"Surface chemical analysis — Data transfer format for scanning-probe microscopy","format for the transfer of scanning-probe microscopy (SPM) data from computer to computer via parallel interfaces or via serial interfaces over direct wire, local area network, global network or other communication links",90.93]
["SC4"," ISO 14606:2022",3,"Surface chemical analysis — Sputter depth profiling — Optimization using layered systems as reference materials","guidance and requirements on the optimization of sputter-depth profiling parameters using appropriate single-layered and multilayered reference materials, in order to achieve optimum depth resolution as a function of instrument settings in Auger electron spectroscopy, X-ray photoelectron spectroscopy and secondary ion mass spectrometry",60.6,"\tKS D ISO14606","\t표면 화학 분석 ― 스퍼터 깊이 분포도 ― 표준 물질로서 계층적 시스템을 이용한 최적화",2022,"2025-05-12"]
["SC4"," ISO/TR 15969:2021",2,"Surface chemical analysis — Depth profiling — Measurement of sputtered depth","guidelines for measuring the sputtered depth in sputtered depth profiling",60.6,"\tKS D ISOTR15969","표면화학분석 ― 깊이 분포 분석 ― 스퍼터된 깊이 측정",2001,"2021-09-28"]
["SC4"," ISO 16531:2020",2,"Surface chemical analysis — Depth profiling — Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS","methods for the alignment of the ion beam to ensure good depth resolution in sputter depth profiling and optimal cleaning of surfaces when using inert gas ions in Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS)",90.2]
["SC4"," ISO 17109:2022",2,"Surface chemical analysis — Depth profiling — Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films","method for the calibration of the sputtered depth of a material from a measurement of its sputtering rate under set sputtering conditions using a single- or multi-layer reference sample with layers of the same material as that requiring depth calibration",60.6]
["SC4"," ISO/TR 22335:2007",1,"Surface chemical analysis — Depth profiling — Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer","method for determining ion-sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X‑ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm2 and 3,0 mm2\n\nmethod to convert the ion-sputtering time scale to sputtered depth in a depth profile by assuming a constant sputtering velocity",90.93]
["SC4"," ISO 23170:2022",1,"Surface chemical analysis — Depth profiling — Non-destructive depth profiling of nanoscale heavy metal oxide thin films on Si substrates with medium energy ion scattering","method for the quantitative depth profiling of amorphous heavy metal oxide ultrathin films on Si substrates using medium energy ion scattering (MEIS)",60.6]
["SC6"," ISO 12406:2010",1,"Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon","secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration",90.93]
["SC6"," ISO 13084:2025",3,"Surface chemical analysis — Secondary ion mass spectrometry — Calibration of the mass scale for a time-of-flight secondary ion mass spectrometer","method to optimize the mass calibration accuracy in time-of-flight secondary ion mass spectrometry (SIMS) instruments used for general analytical purposes",60.6]
["SC6"," ISO 14237:2010",2,"Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials","secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron",90.93,"KS D ISO14237","표면화학분석 ― 이차 이온 질량 분석 ― 실리콘 내에 균일하게 첨가된 붕소 원자 농도의 측정 방법",2010,"2025-05-12"]
["SC6"," ISO 17560:2014",2,"Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon","secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration",90.93,"\tKS D ISO17560","표면화학분석 ―이차 이온 질량 분석 ―실리콘 내의 붕소 깊이 분포 측정 방법",2014,"2025-05-12"]
["SC6"," ISO 17862:2022",2,"Surface chemical analysis — Secondary ion mass spectrometry — Linearity of intensity scale in single ion counting time-of-flight mass analysers","method for determining the maximum count rate for an acceptable limit of divergence from linearity of the intensity scale in single ion counting time-of-flight (TOF) secondary ion mass spectrometers using a test based on isotopic ratios in spectra from poly(tetrafluoroethylene) (PTFE). \n\nmethod to correct for intensity nonlinearity arising from intensity lost from a microchannel plate (MCP) or scintillator and photomultiplier followed by a time-to-digital converter (TDC) detection system caused by secondary ions arriving during its dead-time.",60.6,"KS D ISO 17862:2022","표면 화학 분석 - 이차 이온 질량분석법 - 단일 이온 계수 비행 시간 질량분석기에서의 세기 스케일 선형성",2022,"제정 진행중"]
["SC6"," ISO 18114:2021",2,"Surface chemical analysis — Secondary-ion mass spectrometry — Determination of relative sensitivity factors from ion-implanted reference materials","method of determining relative sensitivity factors (RSFs) for secondary-ion mass spectrometry (SIMS) from ion-implanted reference materials",60.6,"KS D ISO18114","표면화학분석 ― 이차이온 질량 분광분석법 ― 이온 주입된 기준물질로부터 상대감도인자의 결정",2021,"개정 진행중"]
["SC6"," ISO 20341:2003",1,"Surface chemical analysis — Secondary-ion mass spectrometry — Method for estimating depth resolution parameters with multiple delta-layer reference materials","procedures for estimating three depth resolution parameters, viz the leading-edge decay length, the trailing-edge decay length and the Gaussian broadening, in SIMS depth profiling using multiple delta-layer reference materials",90.93,"\tKS D ISO20341","표면화학분석 ― 이차이온 질량분광분석법 ― 다중 델타층 기준물질을 이용하여 깊이 분해능 파라미터를 평가하는 방법",2003,"2020-12-23\n(5년 도래 확인 중)"]
["SC6"," ISO 20411:2018",1,"Surface chemical analysis — Secondary ion mass spectrometry — Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry","method for determining the maximum count rate for an acceptable limit of divergence from linearity of the intensity scale in pulse counting magnetic sector-type secondary ion mass spectrometers or quadrupole secondary ion mass spectrometers.",90.92]
["SC6"," ISO/AWI 20411",2,"Surface chemical analysis — Secondary ion mass spectrometry — Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry","method for determining the maximum count rate for an acceptable limit of divergence from linearity of the intensity scale in pulse counting magnetic sector-type secondary ion mass spectrometers or quadrupole secondary ion mass spectrometers.",20]
["SC6"," ISO 22415:2019",1,"Surface chemical analysis — Secondary ion mass spectrometry — Method for determining yield volume in argon cluster sputter depth profiling of organic materials","method for measuring and reporting argon cluster sputtering yield volumes of a specific organic material",90.93]
["SC6"," ISO/TS 22933:2022",1,"Surface chemical analysis — Secondary ion mass spectrometry — Method for the measurement of mass resolution in SIMS","method for measuring the mass resolution in SIMS, and how to compare the mass resolution between different instruments (e.g. TOF-SIMS, Magnetic SIMS, Quadrupole SIMS, Fourier Transform SIMS, etc.) by considering the peak shapes",90.92]
["SC6"," ISO 23812:2009",1,"Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials","procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials",90.93]
["SC6"," ISO 23830:2008",1,"Surface chemical analysis — Secondary-ion mass spectrometry — Repeatability and constancy of the relative-intensity scale in static secondary-ion mass spectrometry","method for confirming the repeatability and constancy of the positive-ion relative-intensity scale of static secondary-ion mass spectrometers, for general analytical purposes",90.93]
["SC6","ISO/AWI TS 22933",2,"Surface chemical analysis — Secondary ion mass spectrometry — Method for the measurement of mass resolution in SIMS","This document specifies a method for measuring the mass resolution in SIMS, and how to compare the mass resolution between different instruments (e.g. TOF-SIMS, Magnetic SIMS, Quadrupole SIMS, Fourier Transform SIMS, etc.) by considering the peak shapes.",10.99]
["SC7"," ISO 5861:2024",1,"Surface chemical analysis — X-ray photoelectron spectroscopy — Method of intensity calibration for quartz-crystal monochromated Al Kα XPS instruments","procedure by which the intensity scale of an X-ray photoelectron spectrometer that employs a concentric hemispherical analyser can be calibrated using low-density poly(ethylene)",60.6]
["SC7"," ISO 10810:2019",2,"Surface chemical analysis — X-ray photoelectron spectroscopy — Guidelines for analysis","document is intended to aid the operators of X-ray photoelectron spectrometers in their analysis of typical samples",90.6]
["SC7"," ISO 13424:2013",1,"Surface chemical analysis — X-ray photoelectron spectroscopy — Reporting of results of thin-film analysis","minimum amount of information required in reports of analyses of thin films on a substrate by XPS",90.93]
["SC7"," ISO/TR 14187:2020",2,"Surface chemical analysis — Characterization of nanostructured materials","introduction to (and some examples of) the types of information that can be obtained about nanostructured materials using surface-analysis tools (Clause 5)\n\nExamples of methods applicable to both thin films and to particles or nano-sized objects are presented",60.6]
["SC7"," ISO 14701:2018",2,"Surface chemical analysis — X-ray photoelectron spectroscopy — Measurement of silicon oxide thickness","methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy",90.6]
["SC7"," ISO 15470:2017",2,"Surface chemical analysis — X-ray photoelectron spectroscopy — Description of selected instrumental performance parameters","way in which specific aspects of the performance of an X-ray photoelectron spectrometer are described",90.93,"KS D ISO15470","표면화학분석 ― X선 광전자 분광법 ― 선택한 기기의 성능 파라미터 설명",2017,"개정 진행중"]
["SC7"," ISO 15471:2016",2,"Surface chemical analysis — Auger electron spectroscopy — Description of selected instrumental performance parameters","requirements for the description of specific aspects of the performance of an Auger electron spectrometer",90.93,"KS D ISO15471","표면화학분석 ― 오제전자 분광법 ― 선택한 기기 성능의 파라미터 설명",2016,"개정 진행중"]
["SC7"," ISO 15472:2010",2,"Surface chemical analysis — X-ray photoelectron spectrometers — Calibration of energy scales","method for calibrating the binding-energy scales of X‑ray photoelectron spectrometers, for general analytical purposes, using unmonochromated Al or Mg X‑rays or monochromated Al X‑rays\n\nmethod to establish a calibration schedule, to test for the binding-energy scale linearity at one intermediate energy, to confirm the uncertainty of the scale calibration at one low and one high binding-energy value, to correct for small drifts of that scale and to define the expanded uncertainty of the calibration of the binding-energy scale for a confidence level of 95 %",90.2,"\tKS D ISO15472","표면 화학 분석 ― X선 광전자 분광기 ― 에너지 눈금의 교정",2010,"2025-05-12"]
["SC7"," ISO 16129:2018",2,"Surface chemical analysis — X-ray photoelectron spectroscopy — Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer","document is designed to allow the user to assess, on a regular basis, several key parameters of an X‑ray photoelectron spectrometer",90.6]
["SC7"," ISO 17973:2024",3,"Surface chemical analysis — Medium-resolution Auger electron spectrometers — Calibration of energy scales for elemental analysis","method for calibrating the kinetic energy scales of Auger electron spectrometers with an uncertainty of 3 eV, for general analytical use in identifying elements at surfaces\n\nmethod for establishing a calibration schedule",60.6,"KS D ISO17973","표면화학분석 ― 중분해능 오제전자 분광계 ― 원소 분석을 위한 에너지 눈금 교정",2002,"2021-09-28"]
["SC7"," ISO 17974:2002",1,"Surface chemical analysis — High-resolution Auger electron spectrometers — Calibration of energy scales for elemental and chemical-state analysis","method for calibrating the kinetic energy scales of Auger electron spectrometers used for elemental and chemical state analysis at surfaces\n\ncalibration schedule for testing the kinetic energy scale linearity at one intermediate energy, for confirming the uncertainty of the scale calibration at one low and one high kinetic energy value, for correcting for small drifts of that scale and defining the expanded uncertainty of the calibration of the kinetic energy scale for a confidence level of 95 % (with this uncertainty including contributions for behaviours observed in interlaboratory studies but not covering all possible defects)",90.93,"\tKS D ISO17974","표면화학분석 ― 고분해능 오제전자 분광계 ― 원소 및 화학상태 분석을 위한 에너지 눈금 교정",2002,"2021-09-28"]
["SC7"," ISO 18118:2024",3,"Surface chemical analysis — Auger electron spectroscopy and X-ray photoelectron spectroscopy — Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials","guidance on the measurement and use of experimentally-determined relative sensitivity factors for the quantitative analysis of homogeneous materials by Auger electron spectroscopy and X-ray photoelectron spectroscopy",60.6,"KS D ISO18118","표면화학분석 ― 오제전자 분광법과 X선 광전자 분광법 ― 균질재료의 정량분석을 위해 실험으로 결정된 상대감도인자의 사용 지침",2024,"개정 진행중"]
["SC7"," ISO/TR 18392:2005",1,"Surface chemical analysis — X-ray photoelectron spectroscopy — Procedures for determining backgrounds","guidance for determining backgrounds in X-ray photoelectron spectra",90.92]
["SC7"," ISO/CD TR 18392",2,"Surface chemical analysis — X-ray photoelectron spectroscopy — Procedures for determining backgrounds","-",30.99]
["SC7"," ISO/TR 18394:2016",2,"Surface chemical analysis — Auger electron spectroscopy — Derivation of chemical information","guidelines for identifying chemical effects in X-ray or electron-excited Auger-electron spectra and for using these effects in chemical characterization",60.6]
["SC7"," ISO 18554:2016",1,"Surface chemical analysis — Electron spectroscopies — Procedures for identifying, estimating and correcting for unintended degradation by X-rays in a material undergoing analysis by X-ray photoelectron spectroscopy","procedure for identifying, estimating and correcting for unintended degradation in the elemental composition or chemical state of a material which occurs as a result of X-radiation during the time that a specimen material is exposed to the X-rays used in X-ray photoelectron spectroscopy (XPS)",90.93]
["SC7"," ISO 19318:2021",2,"Surface chemical analysis — X-ray photoelectron spectroscopy — Reporting of methods used for charge control and charge correction","minimum amount of information spectroscopy to be reported with the analytical results to describe the methods of charge control and charge correction in measurements of core-level binding energies for insulating specimens by X‑ray photoelectron\n\nmethods for charge control and for charge correction in the measurement of binding energies",60.6,"\tKS D ISO19318","표면화학분석 ― X선 광전자 분광법 ― 전하제어와 전하교정에 사용하는 방법의 보고",2021,"개정 진행중"]
["SC7"," ISO 19668:2017",1,"Surface chemical analysis — X-ray photoelectron spectroscopy — Estimating and reporting detection limits for elements in homogeneous materials","procedure by which elemental detection limits in X-ray photoelectron spectroscopy (XPS) can be estimated from data for a particular sample in common analytical situations and reported",90.6]
["SC7"," ISO 19830:2015",1,"Surface chemical analysis — Electron spectroscopies — Minimum reporting requirements for peak fitting in X-ray photoelectron spectroscopy","Standard is to define how peak fitting and the results of peak fitting in X-ray photoelectron spectroscopy shall be reported\n\nlist of those parameters which shall be reported if either reproducible peak fitting is to be achieved or a number of spectra are to be fitted and the fitted spectra compared",90.93]
["SC7"," ISO 20903:2019",3,"Surface chemical analysis — Auger electron spectroscopy and X-ray photoelectron spectroscopy — Methods used to determine peak intensities and information required when reporting results","information required in a report of analytical results based on measurements of the intensities of peaks in Auger electron and X-ray photoelectron spectra\n\nmethods for the measurement of peak intensities and on uncertainties of derived peak areas",90.6,"KS D ISO 20903:2019","표면 화학 분석 - 오제 전자 분광법 및 X-선 광전자 분광법 - 결과 보고시 요구되는 피크 세기 측정 방법 및 정보",2019,"제정 진행중"]
["SC7"," ISO 21270:2004",1,"Surface chemical analysis — X-ray photoelectron and Auger electron spectrometers — Linearity of intensity scale","methods for determining the maximum count rate for an acceptable limit of divergence from linearity of the intensity scale of Auger and X-ray photoelectron spectrometers\n\nmethods to correct for intensity non-linearities so that a higher maximum count rate can be employed for those spectrometers for which the relevant correction equations have been shown to be valid",90.93,"\tKS D ISO21270","표면화학분석 ― X선 광전자 및 오제 전자 분광계 ― 세기 눈금의 직선성",2004,"2020-12-23\n(5년 도래 확인 중)"]
["SC7"," ISO/TR 23173:2021",1,"Surface chemical analysis — Electron spectroscopies — Measurement of the thickness and composition of nanoparticle coatings","description of methods by which the coating thickness and chemical composition of \"core-shell\" nanoparticles (including some variant and non-ideal morphologies) can be determined using electron spectroscopy techniques\n\nuse of electron spectroscopy techniques, specifically X-ray photoelectron spectroscopy, Auger electron spectroscopy, and synchrotron-based methods",60.6]
["SC7"," ISO 24236:2005",1,"Surface chemical analysis — Auger electron spectroscopy — Repeatability and constancy of intensity scale","method for evaluating the constancy and repeatability of the intensity scale of Auger electron spectrometers, for general analytical purposes, using an electron gun with a beam energy of 2 keV or greater",90.93]
["SC7"," ISO 24237:2005",1,"Surface chemical analysis — X-ray photoelectron spectroscopy — Repeatability and constancy of intensity scale","method for evaluating the repeatability and constancy of the intensity scale of X-ray photoelectron spectrometers, for general analytical purposes, using unmonochromated Al or Mg X-rays or monochromated Al X-rays",90.92]
["SC7"," ISO/DIS 24237",2,"Surface chemical analysis — X-ray photoelectron spectroscopy — Repeatability and constancy of intensity scale","method for evaluating the repeatability and constancy of the intensity scale of X-ray photoelectron spectrometers, for general analytical purposes, using unmonochromated Al or Mg X-rays or monochromated Al X-rays",40.99]
["SC7"," ISO 29081:2010",1,"Surface chemical analysis — Auger electron spectroscopy — Reporting of methods used for charge control and charge correction","minimum amount of information required for describing the methods of charge control in measurements of Auger electron transitions from insulating specimens by electron-stimulated Auger electron spectroscopy and to be reported with the analytical results",90.93]
["SC7"," ISO/AWI TS 25739",1,"Surface chemical analysis — Electron spectroscopies — Work function measurement by ultraviolet photoelectron spectroscopy","overview of the measurement of the work function (WF) using ultraviolet photoelectron spectroscopy (UPS)\n\nguidelines for measuring the work function (WF) using ultraviolet photoelectron spectroscopy (UPS)",20]
["SC8"," ISO 11505:2025",2,"Surface chemical analysis — General procedures for quantitative compositional depth profiling by glow discharge optical emission spectrometry","glow discharge optical emission spectrometric (GD-OES) method for the determination of the thickness, mass per unit area and chemical composition of surface layer films",60.6]
["SC8"," ISO 14707:2021",3,"Surface chemical analysis — Glow discharge optical emission spectrometry (GD-OES) — Introduction to use","guidelines that are applicable to bulk and depth profiling GD-OES analyses",60.6,"\tKS D ISO14707","표면화학분석 ― 글로우 방전 방출분광기(GD-OES) ― 소개서",2021,"2025-05-12"]
["SC8"," ISO/TS 15338:2025",3,"Surface chemical analysis — Glow discharge mass spectrometry — Operating procedures","procedures for the operation and use of glow discharge mass spectrometry (GD-MS)",60.6]
["SC8"," ISO 16962:2017",2,"Surface chemical analysis — Analysis of zinc- and/or aluminium-based metallic coatings by glow-discharge optical-emission spectrometry","glow-discharge optical-emission spectrometric method for the determination of the thickness, mass per unit area and chemical composition of metallic surface coatings consisting of zinc- and/or aluminium-based materials",90.93]
["SC8"," ISO/WD 21133",1,"Analysis of tin based metallic coatings by glow discharge optical emission spectrometry","glow discharge optical emission spectrometric method for the determination of the mass per unit area of tin based metallic coatings",20.6]
["SC8"," ISO 24417:2022",1,"Surface chemical analysis — Analysis of metallic nanolayers on iron based substrates by glow-discharge optical-emission spectrometry","glow discharge optical emission spectrometric method for the determination of the thickness and mass per unit area of single and metallic nanolayers on iron-based substrates",60.6]
["SC8"," ISO/TS 25138:2025",3,"Surface chemical analysis — Analysis of metal oxide films by glow-discharge optical-emission spectrometry","glow discharge optical emission spectrometric method for the determination of the thickness, mass per unit area and chemical composition of metal oxide films",60.6]
["SC9"," ISO 11039:2012",1,"Surface chemical analysis — Scanning-probe microscopy — Measurement of drift rate","terms and specifies measurement methods for characterizing the drift rates of scanning-probe microscopy (SPM) instruments in the X- and Y-directions and, for SPM instruments measuring topography, the drift rate in the Z-direction",90.93]
["SC9"," ISO 11775:2015",1,"Surface chemical analysis — Scanning-probe microscopy — Determination of cantilever normal spring constants","methods for the determination of normal spring constants for atomic force microscope cantilevers to an accuracy of 5 % to 10 %",90.93]
["SC9"," ISO 11952:2019",2,"Surface chemical analysis — Scanning-probe microscopy — Determination of geometric quantities using SPM: Calibration of measuring systems","methods for characterizing and calibrating the scan axes of scanning-probe microscopes (SPMs) for measuring geometric quantities at the highest level",90.93]
["SC9"," ISO 13083:2015",1,"Surface chemical analysis — Scanning probe microscopy — Standards on the definition and calibration of spatial resolution of electrical scanning probe microscopes (ESPMs) such as SSRM and SCM for 2D-dopant imaging and other purposes","method for measuring the spatial (lateral) resolution of scanning capacitance microscopes (SCMs) or scanning spreading resistance microscopes (SSRMs), which are widely used in imaging the distribution of carriers and other electrical properties in semiconductor devices",90.93]
["SC9"," ISO 13095:2014",1,"Surface Chemical Analysis — Atomic force microscopy — Procedure for in situ characterization of AFM probe shank profile used for nanostructure measurement","methods for characterizing the shape of an AFM probe tip, specifically the shank and approximate tip profiles",90.93]
["SC9"," ISO/AWI TR 13096",1,"Guideline to describe AFM probe properties","-",20]
["SC9"," ISO 21222:2020",1,"Surface chemical analysis — Scanning probe microscopy — Procedure for the determination of elastic moduli for compliant materials using atomic force microscope and the two-point JKR method","procedure for the determination of elastic modulus for compliant materials using atomic force microscope (AFM)",90.6]
["SC9"," ISO/WD TR 23683",1,"Surface chemical analysis — scanning probe microscopy — Guideline for experimental quantification of carrier concentration in semiconductor devices by using electric scanning probe microscopy","-",20.99]
["SC9"," ISO 23729:2022",1,"Surface chemical analysis — Atomic force microscopy — Guideline for restoration procedure for atomic force microscopy images dilated by finite probe size","procedure for the quantitative characterization of the probe tip of an atomic force microscope (AFM) probe and a restoration of AFM topography images dilated by finite probe size",60.6]
["SC9"," ISO 27911:2011",1,"Surface chemical analysis — Scanning-probe microscopy — Definition and calibration of the lateral resolution of a near-field optical microscope","method for determining the spatial (lateral) resolution of an apertured near-field scanning optical microscope (NSOM) by imaging an object with a size much smaller than the expected resolution",90.93]