recent advances in ion milling techniques for tem specimen preparation of materials

chemically assisted ion beam etching (caibe) and ion beam polishing (very low angle ion milling) are two new techniques complementary to the conventional inert gas ion milling method in the field of tem specimen preparation of materials. they facilitate the preparation of difficult specimens. in the caibe system a collimated, molecular be..

improved thermal processing of mos diodes on n-inp

metal-insulator-inp diodes with al, ni, au, and pd were fabricated using improved surface passivation techniques. the i-v and barrier height data indicate that a thin thermal oxide between the metal/inp and proximity cap protection during the rapid thermal annealing of the ohmic contact, improve the surface properties as confirmed by deep..

selective nucleation based epitaxy of cvd diamond

diamond sentaxy (selective nucleation based epitaxy) technique for fabrication of diamond by chemical vapor deposition is described. this technique has a two-step process for substrate treatment before deposition-roughening by the use of diamond powder and irradiation with an ar beam. the control of diamond nucleation sites has been achie..

the fabrication of a novel composite gaas/sio/sub 2/ nucleation layer on silicon for heteroepitaxial overgrowth by molecular beam epitaxy

the authors report on the fabrication of a composite gaas-sio/sub 2/ nucleation layer. the layer is formed by a deposition of a gaas island layer by molecular beam epitaxy (mbe), followed by an oxidation step of the silicon regions surrounding the islands. in this way, small gaas islands, for which the critical thickness for misfit disloc..

toward microphotoconversion

chemical and physical processes characteristic to mu m-order dimensions are demonstrated. as mu m-size effects, the photoresponse time of dilation of microgels and the efficiency of pyrene excimer formation in liquid droplets dispersed in water are shows to decrease with reducing their size to mu m. fabrication of a series of mu m-order r..

surface studies on untreated and plasma-treated carbon fibers

xps and contact-angle measurements have been performed on a number of untreated and plasma-treated commercial carbon fibers. in the case of untreated unsized fiber, correlations between surface composition, modulus and wettability were observed. sized fibers had similar surface compositions and contact angles. plasma treatment resulted in..

evaluation of the interfacial bond properties between carbon phenolic and glass phenolic composites

the effects of moisture and surface finish on the mechanical and physical properties of the interfacial bond between the carbon/phenolic (c/p) and glass/phenolic (g/p) composite materials are presented in this paper. four flat panel laminates were fabricated using the c/p and g/p materials. of the four laminates, one panel was fabricated ..

substrate-epitaxial layer interface effects on algaas/gaas heterostructure device properties

device characteristics of algaas/gaas heterostructure field effect transistors fabricated by molecular-beam epitaxial growth are related to the condition of the substrate-epitaxial layer interface the presence of carbon on the gaas wafer surface prior to growth has been found to produce a p-type, conducting interfacial region. the concent..

all-solid-state glucose sensor using proton-conductive thick film

a solid-state glucose sensor using a proton-conductor thick film was investigated as a possible approach to a miniaturized enzyme sensor. a planar-type electrochemical cell, (reference electrode) au mod antimonic-acid thick film (proton conductor) mod pt-god (sensing electrode), was fabricated on a porous alumina substrate. when measured ..

thinned backside illuminated cooled ccds for uv and vuv applications

it is well known that thinned backside illuminated ccd image sensors are very efficient for electron beam imaging. the authors have adapted an electron-bombarded (eb) ccd for application in uv and vuv spectral regions. this adaptation includes the creation of shallow accumulation layer near the device backside surface either by ion implan..