검색어 "" 에 대한 총 22378 건의 검색결과를 찾았습니다.
fabrication of multi soi structures in combination with lateral-solid phase epitaxy and selective epitaxial growth
the authors have found that ultra-low pressure chemical vapor deposition (u-lpcvd) with an ar plasma process is applicable to in-situ substrate surface cleaning, selective epitaxial growth (seg), and a-si deposition for lateral-solid phase epitaxy (l-spe) as a result, the combination technique of seg and l-spe is effective in achieving a ..
application of chemical mechanical polishing to the fabrication of vlsi circuit interconnections
application of the chemical mechanical polishing of silicon dioxide used as the interlevel dielectric in the manufacture of vlsi chips has led to the development of a relatively simple process for fabrication of the device wiring on such chips. the polishing process is used to remove the interlevel dielectric from the tops of interconnect..
low-temperature in-situ dry cleaning process for epitaxial layer multiprocessing
a low-temperature (600 degrees -750 degrees c) dry surface cleaning process has been developed for in-situ removal of native oxide layers and other surface contaminants. the cleaning process chemistry consists of a mixture of germane (geh/sub 4/) and hydrogen (h/sub 2/) gases with very low germane-to-hydrogen flow ratio (10-20 ppm). the p..
metal-dopant compound formation in tisi/sub 2/ studied by transmission and scanning electron microscopy
for modern integrated circuit technology, silicides on highly doped silicon are of great interest. however, due to immobilization of dopants during heat treatment, some of the commonly used silicides are not suitable for this purpose. in the case of tisi/sub 2/, boron and arsenic implantations into silicon prior to silicide fabrication an..
shallow junction formation using diffusion from self-aligned silicides
several issues associated with the silicide-as-diffusion-source (sads) process were studied for ultra shallow junction fabrication using tisi/sub 2/, cosi/sub 2/, nisi, pd/sub 2/si and ptsi. it was found that grain boundary diffusion in the silicides in combination with a high implant dose may be effective in supplying dopant to the silic..
laser- and particle-beam chemical processes on surfaces symposium
the following topics were dealt with' laser- and beam-induced surface processes: laser-induced deposition of metal films: laser-induced writing of metal lines: laser-induced deposition of semiconductors: lamp-induced cvd: laser-induced chemical etching: laser-induced surface ablation: laser-induced surface modification: ion-, electron-, a..
improvement of the electrical properties of metal-sio/sub 2/-silicon capacitors by a preoxidation hf/ethanol clean of the substrate
the influence of a hf-ethanol dip as the last preoxidation cleaning step in the fabrication of metal-thin insulator-silicon capacitors is investigated. the experimental procedure and main advantages of this cleaning step for the electrical properties such as breakdown characteristics, i/v characteristics and interface state density are pr..
effect of fiber treatment on the mechanical properties of hybrid fiber reinforced polystyrene composites. iv. use of glass fiber and sawdust as hybrid fiber
hybrid combinations of sawdust and surface-treated glass fiber were used as reinforcing filler for polystyrene composites. under study was the effect of various parameters (e.g., wood species (e.g., hardwood aspen and softwood spruce), pretreatment of sawdust (e.g., coating with polymer+isocyanate or with a silane coupling agent and graft..
examination of deterioration behavior of carbon fiber-matrix interface owing to water absorption by torsional braid analysis
the influence of water absorption on the deterioration of carbon fiber reinforced plastics (cfrp) was investigated from the viewpoint of the interfacial change in bonding. carbon fiber braids impregnated with epoxy resin were made and cured. and they were tested by torsional braid analysis (tba) after immersion in boiling water. the glass..
excimer laser thin metallic film patterning on polyvinylidene difluoride
tactile sensors and ultrasonic transducers based on the piezoelectric properties of polyvinylidene difluoride, pvf/sub 2/, usually take the form of thin 10-110 mu m polymer films coated on one or both sides with a metallic film. electrode patterns are usually fabricated by photolithography that requires a 90 degrees c baking process which..