gan blue and uv light emitting diodes with a pn-junction

the free electron concentration of a n-type gan film is controlled by si-doping, using sih/sub 4/ as the si source preparation of gan film having p-type conductivity has been achieved for the first time by treating high resistivity gan'mg film with low energy electron beam irradiation. gan-led with a pn-junction has been fabricated for th..

clearing the air' cleaning hybrids in the 1990s

this article describes various applications and implications of common cleaning techniques used in the manufacture of thick film microelectronics. some of these processes are similar to those used in assembling surface mounted devices onto fiberglass circuit boards. the cleaning applications described involved ceramic substrates: however,..

raman spectral studies of al-alo/sub x/-mpc-m' tunnel diodes' bias and top metal dependence

raman spectra of al-alo/sub x/-mpc-m' tunnel diodes, where m=cu or h/sub 2/, m'=ag or pb, and pc=phthalocyanine, are reported no evidence is found for chemical modification of either cupc or h/sub 2/pc in any step of the device fabrication process. by observing the raman spectra of functioning tunnel diodes, it is demonstrated that no ele..

microwave heating in industry

the author illustrates the principle and characteristics of microwave heating, pointing out the advantages and limitations. the components of a microwave heating system are described, and cavity and tunnel devices are examined. the author considers the problem of safety with reference to studies carried out in the usa and ussr and to cei ..

improvement of regrown interface in inp organo-metallic vapor phase epitaxy

it is shown that a preheating process in a pure hydrogen atmosphere with a (nh/sub 4/)/sub 2/s/sub x/ treatment was effective for improvement of the regrown interface in inp organometallic vapor phase epitaxy (omvpe). the carrier concentration was under 5*10/sup 15/ cm/sup -3/ in the entire region after the regrowth, even if the authors c..

cleaved surfaces of high t/sub c/ films for making sns structures

in exploring the feasibility of fabricating high t/sub c/ sns josephson junctions with well-defined and clean sn interfaces, the authors have cleaved epitaxial thin films of y-ba-cu-o and bi-sr-ca-cu-o of various crystal orientations in vacuum while the evaporation of a noble metal is taking place. the samples had structures which allowed..

method of electron-acoustic spectroscopy

a method has been developed for recording the local disturbances of equilibrium between the electron subsystem and the crystal lattice of films and the disperse particles of polymers governing the efficiency of technological operations being accompanied by electron subsystem perturbations, for instance, the quaternization of ternary nitro..

ultra clean processing

it is demonstrated that ultra clean technology is a crucial factor in developing high quality processing technology for future ulsi fabrication. only simultaneous establishment of three principles, i.e., ultra clean processing environment, ultra clean wafer surface, and perfect process-parameter control, makes it possible to realize high ..

novel metal ion surface modification technique

the authors describe a method for applying metal ions to the near-surface region of solid materials. the added species can be energetically implanted below the surface or built up as a surface film with an atomically mixed interface with the substrate: the metal ion species can be the same as the substrate species or different from it, an..

fabrication and electrical characterization of near ideal (n=1.1) schottky barrier diodes of au on n-gasb

near ideal schottky barrier diodes of au on liquid phase epitaxially grown n type gasb have been fabricated by optimising surface preparation condition before forming metal contact on gasb electrical properties of these schottky barriers have been investigated by i-v and c-v measurements over a range of temperatures from 180 to 370 k. the..