electrical properties of gallium fluoride (gaf/sub 3/)/gaas interface with and without sulfur treatment

the interface properties of gallium fluoride (gaf/sub 3/) deposited on gaas have been investigated, for the first time. it is shown that the properties are good enough to generate inversion carriers either when gaf/sub 3/ is deposited onto a homoepitaxial gaas layer without breaking the vacuum or when the film is deposited on a sulfur tre..

impact of ultra clean wafer processings on power devices

it is demonstrated that ultraclean technology is a crucial factor in developing high-quality processing technology for future ulsi fabrication. simultaneous establishment of three principles, i.e. ultraclean processing environment, ultraclean wafer surface, and perfect process-parameter control, makes it possible to realize high-quality p..

plasma processing equipment for minimum damage and chamber contamination

in a very low pressure ar discharge, the plasma potential dominates the ion impact energy under high frequency excitation. the authors' study found that the time-average plasma potential can be lowered below 'ground' level by applying dc biasing to the cathode shield. this minimizes contamination from sputtered material

high-quality 100 aa sio/sub 2/ films fabricated by a new ecr microwave pecvd process

the authors produce high quality, very thin films with good electrical integrity using a low temperature ecr microwave pecvd technique. they consider the effects of energetic particles created in the plasma and of substrate surface treatment on the film characteristics

soot bonding process and its application to si dielectric isolation

a dielectric isolated substrate produced by bonding two silicon substrates with si-b-o soot particles generated by a flame hydrolysis reaction is introduced. there are three steps in the production process' spraying si-b-o soot on a flat or a grooved silicon substrate, positioning a support substrate, and sintering the grooves can be fill..

nanofabrication with a scanning tunneling microscope

nanometer-scale structures as small as 1 nm were fabricated on graphite surfaces using a scanning tunneling microscope in the presence of low-pressure (10/sup -4/ torr) trimethylaluminum. the studies were performed under controlled conditions of gas purity and gas pressure, allowing systematic measurements. the authors studied the voltage..

suppression of the emitter size effect on the current gain of algaas/gaas heterojunction bipolar transistor by utilizing (nh/sub 4/)/sub 2/s/sub x/ treatment

the (nh/sub 4/)/sub 2/s/sub x/ surface treatment was applied to the algaas/gaas heterojunction bipolar transistor. the suppression of the emitter size effect on the current gain was observed for up to 4*4 mu m/sup 2/ emitter size devices, and 2.5 times high current gain was obtained with the improvement of the ideality factor. these resul..

requirements of cam in ic technology

ultra clean technology (ultra clean processing environment, ultra clean wafer surface, perfect process-parameter control) is a crucial factor in developing high quality process technology for future ulsi fabrication. wafers should never be exposed to air. the possibility of performing all wafer processes in equipment having the same hardw..

gaas/gaalas traveling wave type laser amplifier with tilted facets

gaas/gaalas traveling wave type laser amplifiers with different tilted angle facets are defined by proton bombardment some characters are measured. maximum single-pass gains of 27.8 db are reached with an optical fiber coupling system

development of biosensors based on ion sensitive field effect transistors

novel enzyme membrane fabrication methods were developed, and adapted to fabricate advanced biosensors based on sos/isfet (silicon on sapphire/ion sensitive field effect transistor). one method called the 'lift-off method' realized enzyme membranes with uniform thickness and reproducible response. by using an ink jet nozzle as a tool for ..