porous silicon oxide layer formation by the electrochemical treatment of a porous silicon layer

a porous silicon layer (psl) with pores of 40-200 aa diam was electrochemically treated at cathodic potentials in an aqueous kcl solution. the treatment gave rise to the increase in proportion of silicon oxides. the surface had a porous structure of 0.5-2 mu m diam after the electrochemical treatment. a comparison study using he-ne laser ..

a new self-aligned subtractive gate process for high-voltage and complementary polycrystalline silicon thin-film transistors

a new self-aligned subtractive gate process is proposed by alternating several masking and polycrystalline silicon gate etching steps from a conventional process to build high voltage (up to 100 v) and complementary thin-film transistors (tft) on insulating substrates. the new process is compatible with conventional tft mask sets and stan..

electroformed x-ray mirrors from lacquer-polished masters

some of the greatest challenges in surface finishing are associated with the fabrication of x-ray mirrors. electroformed nickel mirrors having a finish of less than 10 to 20 aa r.m.s. at autocorrelation lengths of 10 mu m to 1 mm have been produced from mandrels smoothed by coating with a thin layer of acrylic lacquer the lacquer serves b..

fiber and interface fracture in single-crystal aluminum/sic fiber composites

model metal-matrix composite tensile specimens, each containing a single sic fiber in a single crystal of pure al, were grown using a modified bridgman method at two growth rates and with various fiber surface treatments in order to study their effect on fiber and interface strength. using the load drops in tensile tests, the authors meas..

failure mechanisms of edge delamination of composites

the mechanisms controlling edge delamination in (+or-30 degrees /+or-30 degrees /90 degrees /90/sup 0/)/sub s/ composites have been studied. edge delamination strength and fracture toughness were strongly dependent on the resin matrices. for the same resin matrix, however, these properties drastically and consistently varied with the fibe..

surface characteristics of plasma treated wn/sub x//gaas contacts from c-v measurements

the density and the average penetration depth of acceptors near the semiconductor surface were calculated from c-v and j-v measurements on p/sup +//n shannon structures. the wn/sub x//gaas diodes were fabricated using chemically and plasma cleaned gaas surfaces and annealed at several temperatures. it was found that the semiconductor surf..

characteristics of cmos devices fabricated using high quality thin pecvd gate oxide

n- and p-channel fets at 0.25- mu m channel length are fabricated utilizing very thin (35-70 aa) pecvd (plasma-enhanced chemical-vapor-deposited) oxide as the gate dielectric. this oxide can be deposited at very low substrate temperature (

the influence of the surface treatment and edge protection on the noise level in au-si surface barrier gamma detectors

the influence of the fabrication procedure, particularly chemical surface treatment and edge protection, on si surface barrier gamma detector noise levels is reported. high quality low noise detectors result when the au-si detector fabrication process is up-graded by the introduction of additional chemical treatment steps. these include a..

the evolution of silicon wafer cleaning technology

the purity of wafer surfaces is an essential requisite for the successful fabrication of vlsi and ulsi silicon circuits. wafer cleaning chemistry has remained essentially unchanged in the past 25 years and is based on hot alkaline and acidic hydrogen peroxide solutions, a process known as 'rca standard clean'. this is still the primary me..

x-ray photoelectron spectroscopy analysis of y-ba-cu-o surface barrier for superconducting junctions

fabrication of junctions with a y-ba-cu-o/barrier/y-ba-cu-o trilayered structure is attempted. the barrier layer is formed by cf/sub 4/ plasma treatment. a nonlinear structure is observed in the current-voltage curve of the junction, but the josephson current is not detected. the y-ba-cu-o films before and after cf/sub 4/ plasma treatment..