infrared radiation pyrometer using optical fiber-polishing method for incidence face of optical fiber

on the system of this pyrometer, the infrared flux radiated from an object is accepted by an optical fiber and transmitted to an infrared detector through it. therefore, the surface condition of the incidence face of the optical fiber is closely related to measurement accuracy of this irp. in this study, the polishing method of optical fi..

biological effects of microwaves' the risks are in the air

the investigation of non-thermal effects from weak fields is now undertaken by many agencies. in 1979 the us food and drug administration sanctioned the application of weak electromagnetic fields to healing of fractured bones. the sweep of research is indicated by 3 reproduced diagrams' one shows the close correlation between the natural ..

strength improvement in transformation toughened ceramics using compressive residual surface stresses

al/sub 2/o/sub 3/-15 vol. percent zro/sub 2/ bar shaped composite specimens were fabricated by pressing three layers. the two outer layers consisted of al/sub 2/o/sub 3/ and unstabilized zro/sub 2/ (primarily in the monoclinic polymorph), and the inner layer consisted of al/sub 2/o/sub 3/ and partially stabilized zirconia in the tetragona..

characterization of surface modified carbon fibers and their epoxy composites by small angle x-ray scattering

correlates the interlaminar shear strength of 7 different carbon fiber/epoxy composite with structural characteristics determined by small angle x-ray scattering (saxs) measurements. the carbon fibers were all of the same type but had different surface treatments. the saxs patterns of the fibers and of the composites showed a highly nonli..

fabrication and dc characteristics of small-area tantalum and niobium superconducting tunnel junctions

the authors discuss the fabrication and dc electrical characteristics of small-area superconducting tunnel junctions with ta or nb base electrodes and pb or pb/sub 0.9/bi/sub 0.1/ counterelectrodes. these junctions have very small subgap leakage currents, a 'sharp' current rise at the sum-gap voltage, and show strong quantum effects when ..

adsorption of nitrogen on phosphated chrysotile asbestos and leaching

adsorption and desorption isotherms of nitrogen obtained by the volumetric (bet) method, have been used to determine the specific surface and the porosity of a series of chrysotile asbestos fibers before and after chemical treatments. it was shown that the phosphorus compounds that are formed by the reaction of pocl/sub 3/ and chrysotile ..

the role of ion-beam cleaning in the growth of strained-layer epitaxial thin transition metal films

low-energy ion-beam cleaning of the substrates prior to a deposition greatly enhances the quality of ultrathin (<100 aa) refractory superconducting (nb, v) films, using this technique nb films as thin as 7 aa have been grown, from which good tunnel junctions have been fabricated. both the native films and the tunnel junctions are sturdy a..

electrical evaluation of wet and dry cleaning procedures for silicon device fabrication

three different cleaning procedures of silicon wafers are investigated' (i) standard wet clean, (ii) combination of uv/oxygen and wet cleans, and (iii) entirely dry clean consisting of uv/oxygen, and thermally enhanced remote microwave plasma treatments. their performance is experimentally compared when they are used after resist strippin..

reduction of gaas metal-semiconductor field effect transistor sidegating by ultraviolet/ozone cleanup prior to molecular-beam epitaxial growth

this work demonstrates that uv-ozone cleaning of substrates prior to molecular-beam epitaxial growth, which has been shown by other workers to remove carbon contamination, is effective in suppressing sidegating problems otherwise encountered in gaas metal-semiconductor field effect transistors fabricated on the epitaxial layers

schottky diodes on hydrogen plasma treated n-gaas surfaces

the characteristics of schottky diodes on n-gaas fabricated after an in situ low-pressure rf h/sub 2/ plasma treatment have been investigated as a function of the substrate temperature during the plasma treatment. degraded rectifying characteristics result after room-temperature treatments, while diodes with ideality factor as low as 1.01..