laser-induced formation and surface processing of high-temperature superconductors

the use of lasers in the formation and surface processing of high-temperature superconductors (hts) is reviewed. presently, thin film fabrication by reactive laser sputtering, and surface patterning by laser-induced reduction/metallization and ablation are the most promising applications. the great majority of the investigations have been..

characteristics of full etchstop layer transfer/silicon-on-insulator (felt/soi) material

summary form only given. a full etchstop layer transfer/silicon-on-insulator (felt/soi) material process has been developed that meets the following criteria' (1) the material quality is identical to epitaxial silicon layers: (2) the soi layer thickness is well controlled: (3) the insulator material choice and thickness is variable: (4) t..

wide range stm

the authors develop the wide range scanning tunneling microscope (stm) to measure surface topography of a diamond turned gold mirror on a gold coated float polished glass surface. three dimensional positioning of the stm device is achieved by monolithic high precision wide range translation mechanisms called multi-compound parallel spring..

lb films. a 2d approach for molecular electronics

data molecular processing requires assemblies of molecules or supermolecules designed for exhibiting specific properties. three methods make it possible to meet this requirement' bio-engineering methods for the synthesis of artificial proteins of enzymes which induce the right organization in the molecular edifice. although this method is..

interface tailoring for adhesion using ion beams

the adhesion performance of thin deposited films is of critical importance in many technological applications. these applications include metal/ceramic and metal/polymer structures for semiconductor packaging and contact fabrication, optical coatings on glass, and protective coatings on metals. in many such cases, film and substrate have ..

ion implantation in china

ion implantation in silicon has been widely used in the production of semiconductor devices and integrated circuits in china. research of low energy ion implantation, high energy ion implantation and the soi technology is in progress. fully si-implanted planar gaas dual-gate mesfets, high linear gaas hall effect sensors, light emitting di..

ion beam deposition in materials research

ion beam deposition (ibd) is the direct formation of thin films using a low-energy (tens of ev) mass-analyzed ion beam. the process allows depositions in which the energy, isotropic species, deposition rate, defect production, and many other beam and sample parameters can be accurately controlled. this paper reviews recent research at orn..

schottky diode and field-effect transistor on inp

schottky diode has been realized on inp by a special dry surface treatment. the diode reaches a breakdown voltage of 60 v and the reverse current remains at 0.6 mu a under 30 v reserve voltage the best device shows a reserve current of 0.2 na at 1 v voltage with an ideality factor of 1.54. the schottky has been used as a gate in the fabri..

the influence of temperature on the distribution and intensity of the reaction product in rat muscle fibers obtained with the histochemical method for myosin atpase

the influence of temperature in the incubation medium on the localization and intensity of myosin atpase was investigated in striated muscles from the rat using a conventional histochemical technique. it was found that the enzyme reaction was temperature-dependent since the activity in some fibers was raised and in others was depressed by..

activation and deactivation mechanisms for thin-film iron-titanium hydrides

feti is an alloy capable of reversible hydrogen storage at reasonable temperatures and pressures: however, it requires an initial activation procedure and experiences losses in sorption capacity after a number of charge-discharge cycles. backscatter conversion electron mossbauer spectroscopy (cems), x-ray photoelectron spectroscopy (xps) ..