lb film immobilized immunosensor with a charge detection type amplifier

in order to fabricate a miniaturized solid-state sensor, a novel potentiometric immunosensor was designed by incorporating a new amplification system of charge detection type and an electrode covered with immunoglobulin-g (igg, antigen) immobilized in a langmuir-blodgett (lb) film. a surface potential change of 1 mu v generated by the imm..

electrochemical fabrication of micro-enzyme sensor with fast responsiveness and high sensitivity

electrochemical incorporation of enzyme molecules into the growing micropores of platinum black particles is employed for the microfabrication of enzyme electrode. two electrochemical processes, i.e. electrochemical adsorption of enzyme molecules and reductive deposition of metallic microparticles from its complex compound, are simultaneo..

influence of the fabrication conditions on the p/sup +/-tasi/sub 2//poly-si gate quality

the effect of different polycide fabrication steps on the resulting p/sup +/ gate quality is investigated. in particular the boron diffusion is studied in correlation with the oxygen contamination. the role of the quality of the tasi/sub 2//poly-si interface and of the annealing atmosphere on the boron redistribution are pointed out

high performance schottky diode and fet on inp

a high performance schottky diode has been realized on inp by a special surface treatment. the diode reaches a breakdown voltage of 60 v and the reverse current remains at 0.6 mu a for 30 v reverse voltage. the best device shows a reverse current of 0.2 na at 1 v voltage with an ideality factor of 1.54. the schottky diode has been used as..

laser beam reflectivity on the metallic material surfaces

in technological applications and construction of optical instruments for laser radiation, it is necessary to determine the reflectivity of the surfaces of the used materials. the authors describe experimental investigation of the reflectivity properties of the 10.6 mu m co/sub 2/ laser and 0.633 mu m he-ne laser on a number of turned, gr..

intrinsic gettering treatments in bipolar integrated circuit processing

controlled precipitation treatments of the interstitial oxygen have been inserted in the technological process. crystallographic failure distribution on the surface and into the bulk of the silicon wafers was related to the transistor breakdown voltages and to the degree of interstitial oxygen precipitation. it has been noted that the epi..

the effect of phosphorus and sulfur treatment on the surface properties of inp

insulated gate electronic devices on inp and related iii-v compound semiconductors have not to date achieved a level of performance adequate for commercial exploitation. this in part is believed to be due to the noncongruent dissociation of the group v element upon heating. in order to minimize such surface effects on inp, the authors hav..

influence of process parameters on the composition and the electrical properties of thin-plasma-nitrided oxides

the authors studied the influence of process parameters on the composition and the electrical properties of thin sio/sub 2/ films nitrided in a plasma reactor of a novel design. the process parameters investigated include pressure temperature, reactant gas species and flow rate, plasma frequency and power, and process duration. the struct..

atmospheric corrosion performance of welded stainless steels

the results of a 3 year study of the corrosion performance of welded panels of four types of stainless steel in three atmospheric environments are presented. the alloys chosen were weldable grades used in process industries for fabrication of plant for exterior applications such as tankage, pipework, and processing equipment the grades we..

inversion layer mobility under high normal field in nitrided-oxide mosfets

a comprehensive study on the inversion layer mobility improvement of n-channel mosfets with nanometer-range ultra-thin (reoxidized) nitrided oxides is presented. the performance improvement is described from both the device physics modeling and device/circuit design points of view by using the various kinds of current drivability and mobi..