섬유

incorporation of a proton-related donor in the near-surface region of gaas upon plasma hydrogenation

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 437
hydrogenation of gaas crystals was performed by using a remote-plasma configuration with three electrodes in the reactor to distinguish the roles of neutral-radicals ions and electron species schottky diodes fabricated with the wafers hydrogenated in the h+-dominated atmosphere showed lower and higher barrier heights for n- and p-type substrates, respectively, than for untreated ones such changes in barrier height are explained by incorporation of a proton-related donor in the very vicinity of the gaas surface
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