섬유

characterisation of cdte-based epitaxial solar cell structures fabricated by movpe

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 423
this work has principally been concerned with the fabrication and characterisation of a number of cdte-based p-n and p-i-n solar cells by movpe, namely' (i) the n-cds/p-cdte cell on (0001)cds, (ii) the n-cdte/p-znte cell on (100)cdte, (iii) the p-znte/i-cdte/n-cds cell on (0001)cds and (iv) the p-znte/i-cdte/n-gaas cell on (100)gaas. the effects of substrate polishing on the quality of the epitaxial cdte layers were investigated, and for cds, a cro/sub 3//hno/sub 3//h/sub 2/o polish was found to give the best surfaces for epitaxy. doping studies proved ammonia gas unsuitable for the production of high conductivity p-type znte and cdte, but epilayers with conductivities of 10 omega cm and 0.5 omega cm respectively were obtained, however, using elemental arsenic heated to 250 degrees c
이전글 다음글 목록