섬유

photo-excited dry cleaning for ulsi devices

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 414
the authors studied the reverse current in n/sup +/p junctions after photo-excited cleaning for samples fabricated by rie. silicon surfaces of a wafer contaminated during rie were etched by photo-excited dry cleaning using chlorine, after which the unexpectedly large junction leakage current often occurring after wet cleaning alone was completely suppressed
이전글 다음글 목록