섬유

fabrication of silicon nanostructures with a scanning tunneling microscope

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 406
a technique is presented for fabricating si nanostructures with a scanning tunneling microscope operated in air. the process involves the direct chemical modification of a h-passivated si(100) surface and a subsequent liquid etch. the chemically modified portions of the surface can withstand a deep (>100 nm) liquid etch of the unmodified regions with no etch degradations of the modified surface. at a write speed of 1-10 mu m/s, large-area (50 mu m*50 mu m) patterns with lateral feature sizes approximately 25 nm are reliably fabricated
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