섬유

dry cleaning procedure for silicon ic fabrication

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 426
a complete, fully integrated dry wafer cleaning procedure based on remote plasma processing is introduced. included are all the steps needed to prepare a resist coated wafer following a field oxide etch for further processing. experimental results based on surface analysis and mos electrical measurements demonstrate its adequate performance in pre-gate oxidation cleaning. the results obtained can be viewed as a promising step toward the development of dry wafer cleaning technology with a possibly wide range of applications in silicon ic fabrication
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