섬유

gasb-oxide removal and surface passivation using an electron cyclotron resonance hydrogen source

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 428
the authors describe the use of a low-temperature technique, which is based on h atoms from a microwave electron cyclotron resonance (ecr) h/sub 2/ plasma, to remove surface oxides and carbon from a single-crystal gasb surface. the experiments indicate that oxide removal occurs at a temperature of approximately 250 degrees c, much lower than that for thermal evaporation of the oxide. in addition, they have found that subsequent exposure to n atoms from a n/sub 2/ plasma leaves a thin nitride layer, which prevents degradation of the h-cleaned surface. to demonstrate this technique, they have applied it to the processing of an algasb pin photodiode, which is fabricated with molecular-beam epitaxy material. the electrical measurements show that the leakage current, after surface sb-oxide removal, is significantly reduced from that before the ecr-h treatment
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