섬유

growth of a beta -sic film on a si substrate by a direct carbonization method

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 447
single crystal beta -sic films have been fabricated on (100)si substrates through a thermal reaction between the substrate and carbon atoms sublimed from a high purity graphite source. the substrate temperature during the deposition ranged from 600 to 1100 degrees c. the film properties were analyzed by rheed and x-ray diffraction measurements. rbs measurements and tem observations have also been made to investigate the film properties. the single crystal beta -sic films grow at and above 1000 degrees c on (100) substrates. the activation energy is found to be around 1.1 ev for the crystallization process
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