섬유

using electrical failure analysis and microvolume sims to identify and quantify undesired ic dopants

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 426
if a gaas wafer surface is treated with a contaminated chemical that leaves a trace residue even after repeated rinsings and the wafer is subsequently annealed to activate an ion implant, the contaminant may diffuse into the wafer and become a dopant, consequently affecting device performance. this article discusses such a problem and the failure analysis that followed. in the course of the investigation, researchers developed a nine-step contamination test that identified the culprit as a batch of sulfur-contaminated hydrochloric acid. the test, now known as the contamination test, proved so successful that it can be used to screen incoming lots of all acids, bases, and oxidizers employed in device fabrication
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