섬유

processing of inp and related compounds at nanometer dimensions

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 409
processes for the fabrication of nanometer-scale geometries in inp and related materials are discussed. special emphasis is directed to pattern transfer using reactive ion etching in methane-hydrogen plasmas. using these processes, 70 nm-period gratings etched 900 nm deep in inp resulting in an aspect ratio of 25 is demonstrated. it is shown that these processes can be applied successfully to the fabrication of quantum wires in inp/ingaas heterostructures. the high luminescence efficiency of these wires even at dimensions down to 40 nm shows that ch/sub 4//h/sub 2/ reactive ion etching does not severely degrade the optical properties of quantum wires
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