섬유

ultrahigh au/p-gaas schottky barriers due to plasma hydrogenation

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 428
gaas surface modification caused by rf plasma hydrogenation has been studied by electrical characterization of subsequently fabricated au/gaas schottky barriers. while the schottky barrier height on n-gaas is found to reduce slightly, exceptionally high barriers have been seen for p-gaas. the effective barrier height of au/p-gaas diodes increases from 0.35 ev for unhydrogenated control to 0.84 ev with plasma hydrogenation
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