섬유

characteristics of cmos devices fabricated using high quality thin pecvd gate oxide

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 370
n- and p-channel fets at 0.25- mu m channel length are fabricated utilizing very thin (35-70 aa) pecvd (plasma-enhanced chemical-vapor-deposited) oxide as the gate dielectric. this oxide can be deposited at very low substrate temperature (
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