섬유

surface characteristics of plasma treated wn/sub x//gaas contacts from c-v measurements

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 373
the density and the average penetration depth of acceptors near the semiconductor surface were calculated from c-v and j-v measurements on p/sup +//n shannon structures. the wn/sub x//gaas diodes were fabricated using chemically and plasma cleaned gaas surfaces and annealed at several temperatures. it was found that the semiconductor surface cleaning before metal deposition is a key factor to control the rectifying properties of this type of metal/semiconductor contact
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