섬유

porous silicon oxide layer formation by the electrochemical treatment of a porous silicon layer

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 387
a porous silicon layer (psl) with pores of 40-200 aa diam was electrochemically treated at cathodic potentials in an aqueous kcl solution. the treatment gave rise to the increase in proportion of silicon oxides. the surface had a porous structure of 0.5-2 mu m diam after the electrochemical treatment. a comparison study using he-ne laser irradiation of the psl was done that showed no distinct effects in the cathodic reaction rate compared with the electrochemical method. a surface-type humidity sensor was fabricated using the electrochemically treated silicon and found to be sensitive to changes in humidity over a wide range
이전글 다음글 목록