섬유

sputter-etching and plasma effects on the electrical properties of titanium nitride contacts on n-type silicon

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 369
titanium nitride schottky barrier diodes were fabricated on n-type silicon and their current-voltage characteristics studied as a function of substrate treatment prior to tin deposition and post-fabrication exposure to r.f. plasma. the data indicate that sputter-etching of the silicon is required to properly prepare the surface for device fabrication. furthermore, the resulting surface quality is a sensitive function of the power at which predeposition sputter-etching is accomplished. post-fabrication exposure to an r.f. plasma produces an increase in reverse leakage current due to degradation caused by photonic and ion bombardment effects. the degradation is more severe for an argon plasma than it is for nitrogen as expected from ion mass considerations
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