섬유

suppression of the emitter size effect on the current gain of algaas/gaas heterojunction bipolar transistor by utilizing (nh/sub 4/)/sub 2/s/sub x/ treatment

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 378
the (nh/sub 4/)/sub 2/s/sub x/ surface treatment was applied to the algaas/gaas heterojunction bipolar transistor. the suppression of the emitter size effect on the current gain was observed for up to 4*4 mu m/sup 2/ emitter size devices, and 2.5 times high current gain was obtained with the improvement of the ideality factor. these results indicate that the surface recombination at emitter-base junction area are largely reduced by this treatment. the (nh/sub 4/)/sub 2/s/sub x/ treatment also proved to be applicable to the conventional device fabrication processes and highly reliable for the heat treatment
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