섬유

electrical properties of gallium fluoride (gaf/sub 3/)/gaas interface with and without sulfur treatment

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 383
the interface properties of gallium fluoride (gaf/sub 3/) deposited on gaas have been investigated, for the first time. it is shown that the properties are good enough to generate inversion carriers either when gaf/sub 3/ is deposited onto a homoepitaxial gaas layer without breaking the vacuum or when the film is deposited on a sulfur treated surface. the latter process, which was found to be quite effective to reduce the interface states generated by air exposure of gaas surface, will give more freedom in fabricating gaas mis devices
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