섬유

fabrication and electrical characterization of near ideal (n=1.1) schottky barrier diodes of au on n-gasb

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 385
near ideal schottky barrier diodes of au on liquid phase epitaxially grown n type gasb have been fabricated by optimising surface preparation condition before forming metal contact on gasb electrical properties of these schottky barriers have been investigated by i-v and c-v measurements over a range of temperatures from 180 to 370 k. the barrier height of a near ideal schottky barrier diode is 0.46 ev and follows the '2/3 eg rule'
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