섬유

gan blue and uv light emitting diodes with a pn-junction

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 382
the free electron concentration of a n-type gan film is controlled by si-doping, using sih/sub 4/ as the si source preparation of gan film having p-type conductivity has been achieved for the first time by treating high resistivity gan'mg film with low energy electron beam irradiation. gan-led with a pn-junction has been fabricated for the first time. compared to conventional mis-type led, pn-junction type leds can be operated at a low voltage. it has also been found that pn-junction leds emit uv-light from n-layer and blue light from p-layer
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