섬유

shallow junction formation using diffusion from self-aligned silicides

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 381
several issues associated with the silicide-as-diffusion-source (sads) process were studied for ultra shallow junction fabrication using tisi/sub 2/, cosi/sub 2/, nisi, pd/sub 2/si and ptsi. it was found that grain boundary diffusion in the silicides in combination with a high implant dose may be effective in supplying dopant to the silicide/silicon interface, to thereby maintain a high interface concentration. the diffusion of both boron and arsenic from silicide into silicon was seen to be enhanced over conventional diffusion in si. the stability time limit was found to have an activation energy of approximately 5 ev in cosi/sub 2/, 3.5 ev in tisi/sub 2/ and 3.1 ev in ptsi. all sads diodes except tis/sub 2/ as/sup +/, or cosi2 and ptsi b/sup +/ junctions showed high reverse current
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