섬유

fabrication of multi soi structures in combination with lateral-solid phase epitaxy and selective epitaxial growth

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 421
the authors have found that ultra-low pressure chemical vapor deposition (u-lpcvd) with an ar plasma process is applicable to in-situ substrate surface cleaning, selective epitaxial growth (seg), and a-si deposition for lateral-solid phase epitaxy (l-spe) as a result, the combination technique of seg and l-spe is effective in achieving a silicon-on-insulator (soi) structure suitable to a three dimensional ic. in this research, the authors were able to perform seg in order to embed a seeded window, which is the first report concerning seg that employs only the pyrolysis of sih/sub 4/ also, they were able to form a multi-layer stacked soi structure in combination with seg and l-spe, and achieved a maximum l-spe length of 25 mu m even in a double stacked soi structure
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