섬유

hydrocarbon reaction with hf-cleaned si(100) and effects on metal-oxide-semiconductor device quality

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 364
the surface reactivity of hydrogen-passivated, hf-cleaned si(100) towards hydrocarbon adsorption is examined by surface analysis: most hydrocarbons adsorb on the surface. dangling bonds formed during thermal processing react with fragmented organic molecules forming sic. metal-oxide-semiconductor devices fabricated on contaminated surfaces are degraded, with the degree of degradation depending on the nature of the contaminant
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