섬유

interface characterization of znse/gaas heterojunctions

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 376
znse/geas heterojunctions were fabricated by a low-temperature plasma-assisted totally dry process consisting of removal of the native oxide layer in a hydrogen plasma, surface treatment in hydrogen plasma containing se or nitrogen and epitaxial growth of znse in the same chamber. the surface states consist of defect-related surface states superposed on a disorder-induced u-shaped distribution. the energetic position and the density of defect-related surface states, which was clearly revealed when the density of surface states with u-shaped distribution was reduced, depends upon the surface treatment and also upon the gaas wafers used
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