섬유

substrate-epitaxial layer interface effects on algaas/gaas heterostructure device properties

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 366
device characteristics of algaas/gaas heterostructure field effect transistors fabricated by molecular-beam epitaxial growth are related to the condition of the substrate-epitaxial layer interface the presence of carbon on the gaas wafer surface prior to growth has been found to produce a p-type, conducting interfacial region. the concentration of carbon on the wafer surface can be significantly reduced by exposing the wafers to ultraviolet radiation depletion-and enhancement-mode device transfer characteristics and transconductance curves have been obtained on heterostructure wafers that were subjected to an ultraviolet-ozone surface preparation. a comparison of these results with the device properties of wafers receiving a standard cleaning procedure is presented. a model describing the interaction between the interfacial p-type region and the two-dimensional electron gas channel is also included
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