섬유

effect of silicon surface cleaning on the initial stage of selective titanium silicide chemical vapor deposition

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 363
selective titanium silicide chemical vapor deposition (cvd) is a noteworthy method of forming self-aligned titanium silicide film on silicon surfaces to fabricate low resistance metal-silicon contacts in vlsis. a number of studies on selective titanium silicide cvd have been reported, but the influence of si surface cleanness on film growth has yet to be clarified. the authors have found that the features and surface morphology of films are strongly influenced by the conditions of si surfaces. this paper reports on the effects of si surface cleaning on the initial stage of film growth
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