섬유

high-performance ion-implanted mes-fet on inp using enhanced barrier self-aligned schottky gate

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 364
summary form only given. an enhanced barrier schottky diode with a barrier height of 0.78 ev and an ideality factor of 1.04 was fabricated by chemically modifying the surface of inp without the aid of a dielectric layer. this process involves the solution treatment of the inp surface. the presence of ruthenium on the surface was determined by x-ray photoelectron spectroscopy. this process is reproducible and stable with respect to time. the authors discuss results on mis capacitors fabricated simultaneously with and without this surface treatment
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