섬유

schottky contact fabrication for gaas mesfets

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 360
an investigation of cleaning procedures prior to metal gate evaporation in gaas mesfet fabrication was undertaken. a photoresist residue was found to exist after development when using the lift-off technique to define the gate metal pattern. this carbon residue was identified by aes depth profile measurements. schottky diode electrical characteristics were observed to deteriorate due to this residue. of the cleaning solutions examined, only the nh/sub 4/oh solution removed both c and o layers on the gaas surface while still being compatible with the fabrication process. the effects of di h/sub 2/o rinse time on schottky diode electrical performance were also examined
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