섬유

improved liquid phase epitaxial gaas for low series resistance schottky barrier mixer diodes

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 375
millimeter wave schottky barrier mixer diodes are extremely important devices for radio astronomy. the performance of the schottky diodes depends largely on the characteristics and quality of the gaas epitaxial material used. systematic manipulation of the liquid phase epitaxial growth conditions and substrate surface treatments has yielded significantly improved surface morphology initial problems of high resistivity interfacial layers have been reduced without the use of an in situ etchback. 2 mum diameter schottky diodes fabricated from epitaxial layers grown at 725 degreesc exhibit a 9omega series resistance very near the theoretical minimum
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