섬유

the effect of chemical surface treatments on non-native (bi/sub 2/o/sub 3/) gaas metal-insulator-semiconductor solar cells

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 378
gaas metal-insulator-semiconductor solar cells with a physically deposited bi/sub 2/o/sub 3/ interfacial layer have been investigated. the deposition techniques used in the study were electron beam and boat thermal evaporation. the cells fabricated with interfacial layers of bi/sub 2/o/sub 3/ showed a substantial improvement in open-circuit voltage over cells made without the physically deposited oxide layer. an etch has been used which yields an irregular 'textured' surface. cells employing this surface had a higher short-circuit current than those made with smooth, polished surfaces. the open-circuit voltages of these textured cells were lower than those with smooth surfaces. calculations of the dependence of open-circuit voltage on pinhole density are in agreement with these results since a rough surface has a greater probability of pinholes
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