섬유

a simple technique for silicon nitride growth

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 342
the process of fabrication of isfets (ion-selective field effect transistors) includes formation of thin layers of the insulators sio/sub 2/ or si/sub 3/n/sub 4/ on silicon. considering the negative free energy for the possible reaction 6si+3nh/sub 3/=si/sub 3/n/sub 4/+6h/sub 2/ it is predicted that a technique should be possible for growth of silicon nitride films on silicon using readily available anhydrous ammonia. a satisfactory procedure has been found when oxygen is rigorously excluded from the reaction vessel. the method is briefly described
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