after a brief review of the work done during the first three quarters, the work done during the last quarter is discussed in detail. in brief, cdte sputtered self-doped and indium-doped n-type layers on ni-film on glass have been investigated for film resistivity, contact resistance, hall mobility and schottky barrier diode characteristics. ni has been found to provide satisfactory ohmic contacts and self-doped samples have indicated hall mobility of approximately 8cm exp 2 /vsec when the effective doping concentration is approximately 10 exp 18 cm exp -3 . use of indium doped sputtered films, when properly surface treated prior to metallization, appear to yield the best kind of schottky barrier diode with approximate barrier height of 0.77 volt and richardson constant a* approx. = 60 a/cm exp 20 k exp 2 . in spite of these attractive parameter values, these devices showed low v/sub oc/ and the capacitance showed unexpected frequency dependence that require further investigation finally suggestions for future work is presented. (era citation 05: 034635)