섬유

improvement of regrown interface in inp organo-metallic vapor phase epitaxy

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 308
it is shown that a preheating process in a pure hydrogen atmosphere with a (nh//4)//2s//x treatment was effective for improvement of the regrown interface in inp organometallic vapor phase epitaxy (omvpe). the carrier concentration was under 5 $multiplied by$ 10**1**5 cm** $minus$ **3 in the entire region after the regrowth, even if we carried out various dummy processes of fabrication between the first growth and the surface treatment for improvement. thus, this improvement will be useful for the device-required regrowth process after fabrication of an ultrafine-size structure. (author abstract)
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