섬유

optimization of the inp/sio//2 interface treatment by (nh//4) //2s//x for the inp misfet fabrication technology

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 311
in this paper, the inp surface sulfidation by (nh//4)//2s or (nh//4)//2s//x solutions is investigated in order to reduce the long-term drain-current-drift of misfet devices and the interface state density at the inp/sio//2 interface. in order to ensure good reproducibility of this treatment, a full chemical characterization of the ammonium sulfide solutions is proposed. after surface sulfidation, an annealing is done in the photo-cvd chamber before depositing the insulator: at 350 $degree$ c the initial inps//4 layer is transformed into a stable in//2s//3 phase without degradation of the p/in ratio. thanks to this inp surface processing, the 1 mhz and 10 khz c(v) characteristics of mis diodes exhibit a deep depletion regime, n//s//s $equals$ 2 $multiplied by$ 10**1**0 ev** $minus$ **1cm** $minus$ **2, and very little frequency dispersion. these results are very encouraging for the misfet fabrication process (author abstract) 12 refs
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