섬유

improved junction properties of au-n-gasb schottky diodes after chemical modification of gasb surfaces

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 297
polycrystalline n-gasb grown by the vertical bridgman method was chemically treated with ru**3** $plus$ ions. electrical characterisation showed improvement in the electron mobility from 1162 to 1442 cm**2/v s, while the carrier concentration remained almost constant (1 $multiplied by$ 10**1**7 cm** $minus$ **3) schottky diodes were fabricated by thermal deposition of gold and characterised by i-v and c-v studies. an increase in the schottky barrier height from 0.54 to 0.64 ev and a decrease in the ideality factor from 3.2 to 1.69 were repeatedly obtained. the featureless surface after ru**3** $plus$ modification was verified by sem and the presence of ru**3** $plus$ on gasb surfaces was confirmed by esca. (author abstract) 6 refs
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