섬유

effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 302
both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (cvd). the conductivity of the diamond film is strongly affected by the surface treatment. in particular, exposure of film surface to a hydrogen plasma results in the formation of a conductive layer which can be used to obtain linear (ohmic) i-v characteristics of the au/diamond contacts, regardless of the doping level. it is shown how the proper chemical cleaning of the boron-doped homoepitaxial diamond surface allows the fabrication of au-gate schottky diodes with excellent rectifying characteristics at temperatures of at least 400 $degree$ c. 10 refs
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