섬유

core-level binding energy shifts on inp surfaces induced by sputtering and annealing

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 303
fabrication of microelectronic devices based upon iii-v semiconductors such as inp will often involve plasma or sputter deposition of materials onto the semiconductor surface. impingement of such high-energy particles during the initial stages of deposition may cause significant surface damage which in turn may affect the electrical properties of the interface. an understanding of the effects of the various processes is clearly desirable. in a recent paper, the authors reported the effects of 1 and 3 kev ar** $plus$ on various n-type inp surfaces followed by subsequent surface treatments such as thermal annealing. they now extend that work and also include similar studies on p-type surfaces. 3 refs
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