섬유

low dark-current, planar ingaas p-i-n photodiode with a quaternary ingaasp cap layer

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 249
the authors report the successful fabrication of in//0// //5//3ga//0//. //4//7as p-i-n diodes with room temperature dark-currents as low as 0. 1 na at $minus$ 10 v bias by introducing a quaternary ingaasp cap layer on the ternary ingaas. in this new structure the ingaasp cap layer undergoes the surface treatment and faces the dielectric silicon nitride film, but the p-n junction is still located inside the ingaas layer. since the addition of the wide bandgap cap layer results in low dark-current, the reduction of dark-current may be attributed to surface effects. 20 refs
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