섬유

characterization of interface states at ni/ncdf//2 schottky barrier type diodes and the effect of cdf//2 surface preparation

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 257
two schottky diodes were fabricated by evaporation of nickel on to an n-type cdf//2:yf//3 semiconductor diode a was prepared on a slightly etched polished surface and diode b on an unpolished strongly etched surface. the current-voltage (i-v), capacitance-voltage (c-v), and conductance-voltage (g-v) characteristics were determined at room temperature. both diodes showed non-ideal i-v behavior with ideality factors 1. 5 and 2. 0, respectively and are thought to have a metal-interface layer-semiconductor configuration. the characteristic parameters of the interface states (energy position, density, time constant and capture cross-section) were obtained for the values of the forward bias in the range 0. 0 v $less than equivalent to$ v $less than equivalent to$ 0. 2 v. the diode b is found to have the interface state densities about two orders of magnitude higher than the diode a which may be attributed to the different surface treatment. 36 refs
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