the microscopic manipulation of atoms at high temperature has been attempted. a uhv-stm is designed to facilitate sample heating up to 1300 degrees c after sample introduction. the uhv-stm employs stacked piezoelectric elements to control the three-dimensional drive of the tip. nano-fabrication utilizes this fine positioning mechanism and the imaging capability of the stm for ultrafine fabrication of the surface. the technique for nano-fabrication usually changes the bias voltage between the tip and sample during pattern writing while maintaining the tip-sample distance. this method is applied to a high-temperature silicon sample in which atoms on the sample surface are migrated towards the tip. as a result, a pyramid or a crater is formed on the sample. the authors succeeded in creating a hexagonal pyramid and crater on an si(111) surface and a quadrangular pyramid on an si(100) surface at 600 degrees c. (5*5) domains on the si(111) surface can be observed on narrow terraces due to the relaxation of surface energy