비의류제품

high temperature schottky diodes with boron-doped homoepitaxial diamond base

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 440
the authors report the first high temperature operation of thin film diamond based semiconductor devices. boron-doped homoepitaxial diamond films were grown by microwave plasma assisted chemical vapor deposition using insulating natural diamond substrates. the diamond nature of the films was confirmed by several analytical techniques. excellent rectifying characteristics were obtained for au-gate schottky diodes with homoepitaxial diamond base in the 26-583 degrees c temperature range. surface cleaning of the films was found to be a key step of the fabrication process
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