비의류제품

reduction of process-induced defects in power devices

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 441
the impact of various technology steps during the fabrication process on the generation of detrimental defects in power devices has been investigated to find a way of reducing these defects in the critical device regions. the experiments demonstrate that both the recombination rates as well as the generation rates of charge carriers change substantially during the individual process steps owing to the introduction of defects in the silicon lattice. the keep the defect density low, an appropriate silicon surface treatment and cleaning procedure has to be chosen and the time and temperature of the diffusion and oxidation steps have to be minimized. as the in-diffusion of fast-diffusing heavy metals cannot be completely excluded, an effective gettering treatment should be provided in the final high temperature step
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